CJ (Jiangsu Changdian/Changjing)
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MJD112 MJD112

MJD112

MJD112
Nomor Bagian
MJD112
Kategori
Triode/MOS Tube/Transistor > Darlington Tube
Pabrikan/Merek
CJ (Jiangsu Changdian/Changjing)
Enkapsulasi
TO-252-2(DPAK)
Sedang mengemas
taping
Jumlah paket
2500
Keterangan
NPN, Vceo=100V, Ic=2A
Minta Penawaran
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Persediaan 55302 PCS
Kontak informasi
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Triode
HL (Howlin)
MJD112-1G NPN 100V 2A 2.0 A, 100 V NPN Darlington Bipolar Power Transistor
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NPN 100V 2A 2.0 A, 100 V NPN Darlington Bipolar Power Transistor
onsemi (Ansemi)
MJD112G NPN 100V 2A 2.0 A, 100 V NPN Darlington Bipolar Power Transistor
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onsemi (Ansemi)
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NPN 100V 2A 2.0 A, 100 V NPN Darlington Bipolar Power Transistor
onsemi (Ansemi)
MJD112T4 NPN 100V 2A
MJD112T4
NPN 100V 2A
ST (STMicroelectronics)
MJD112T4G 100V 2A
MJD112T4G
100V 2A
Cmos (Guangdong Field Effect Semiconductor)
MJD112T4G NPN 100V 2A 2.0 A, 100 V NPN Darlington Bipolar Power Transistor
MJD112T4G
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onsemi (Ansemi)
MJD117 MJD117
MJD117
MJD117
CJ (Jiangsu Changdian/Changjing)
MJD117-1G PNP 100V 2A 2.0 A, 100 V, PNP Darlington Bipolar Power Transistor
MJD117-1G
PNP 100V 2A 2.0 A, 100 V, PNP Darlington Bipolar Power Transistor
onsemi (Ansemi)
MJD117G PNP 100V 2A 2.0 A, 100 V, PNP Darlington Bipolar Power Transistor
MJD117G
PNP 100V 2A 2.0 A, 100 V, PNP Darlington Bipolar Power Transistor
onsemi (Ansemi)
MJD117T4 PNP 100V 2A
MJD117T4
PNP 100V 2A
ST (STMicroelectronics)
MJD117T4G PNP -100V -2A
MJD117T4G
PNP -100V -2A
Cmos (Guangdong Field Effect Semiconductor)
MJD117T4G PNP 100V 2A 2.0 A, 100 V, PNP Darlington Bipolar Power Transistor
MJD117T4G
PNP 100V 2A 2.0 A, 100 V, PNP Darlington Bipolar Power Transistor
onsemi (Ansemi)
MJD117TF-FS PNP 100V 2A
MJD117TF-FS
PNP 100V 2A
onsemi (Ansemi)
MJD117TF-FS PNP 100V 2A
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MJD122 bipolar transistor
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bipolar transistor
ISC (Wuxi Solid Electric)
Kata kunci dari MJD112
MJD112 Komponen elektronik
MJD112 Penjualan
MJD112 Pemasok
MJD112 Distributor
MJD112 Tabel data
MJD112 Foto
MJD112 Harga
MJD112 Menawarkan
MJD112 Harga terendah
MJD112 Mencari
MJD112 Pembelian
MJD112 Kepingan