Beli Toshiba Semiconductor and Storage TK6A80E,S4X MOSFET N-CH 800V TO220SIS - YYIC

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TK6A80E,S4X

Lihat Info Lembar Data

TK6A80E,S4X

MOSFET N-CH 800V TO220SIS

Nomor Bagian

TK6A80E,S4X

Pabrikan/Merek

Toshiba Semiconductor and Storage

Seri

π-MOSVIII

Status Bagian

Active

Kemasan

Tube

Teknologi

MOSFET (Metal Oxide)

Suhu Operasional

150°C (TJ)

Tipe Pemasangan

Through Hole

Paket / Kasus

TO-220-3 Full Pack

Paket Perangkat Pemasok

TO-220SIS

Disipasi Daya (Maks)

45W (Tc)

Tipe FET

N-Channel

Fitur FET

-

Tiriskan ke Sumber Tegangan (Vdss)

800V

Arus - Pengurasan Kontinu (Id) @ 25°C

6A (Ta)

Rds Aktif (Maks) @ Id, Vgs

1.7 Ohm @ 3A, 10V

Vgs(th) (Maks) @ Id

4V @ 600µA

Biaya Gerbang (Qg) (Maks) @ Vgs

32nC @ 10V

Kapasitansi Masukan (Ciss) (Maks) @ Vds

1350pF @ 25V

Tegangan Penggerak (Max Rds Aktif, Min Rds Aktif)

10V

Vgs (Maks)

±30V

Minta Penawaran

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Persediaan 17692 PCS

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