Toshiba Semiconductor and Storage
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TK14N65W,S1F
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TK14N65W,S1F

MOSFET N-CH 650V 13.7A TO-220
Nomor Bagian
TK14N65W,S1F
Pabrikan/Merek
Toshiba Semiconductor and Storage
Seri
DTMOSIV
Status Bagian
Active
Kemasan
Tube
Teknologi
MOSFET (Metal Oxide)
Suhu Operasional
150°C (TJ)
Tipe Pemasangan
Through Hole
Paket / Kasus
TO-247-3
Paket Perangkat Pemasok
TO-247
Disipasi Daya (Maks)
130W (Tc)
Tipe FET
N-Channel
Fitur FET
-
Tiriskan ke Sumber Tegangan (Vdss)
650V
Arus - Pengurasan Kontinu (Id) @ 25°C
13.7A (Ta)
Rds Aktif (Maks) @ Id, Vgs
250 mOhm @ 6.9A, 10V
Vgs(th) (Maks) @ Id
3.5V @ 690µA
Biaya Gerbang (Qg) (Maks) @ Vgs
35nC @ 10V
Kapasitansi Masukan (Ciss) (Maks) @ Vds
1300pF @ 300V
Tegangan Penggerak (Max Rds Aktif, Min Rds Aktif)
10V
Vgs (Maks)
±30V
Minta Penawaran
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Persediaan 11714 PCS
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