Beli Toshiba Semiconductor and Storage TK12E80W,S1X MOSFET N-CH 800V 11.5A TO220 - YYIC

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TK12E80W,S1X

Lihat Info Lembar Data

TK12E80W,S1X

MOSFET N-CH 800V 11.5A TO220

Nomor Bagian

TK12E80W,S1X

Pabrikan/Merek

Toshiba Semiconductor and Storage

Seri

DTMOSIV

Status Bagian

Active

Kemasan

Tube

Teknologi

MOSFET (Metal Oxide)

Suhu Operasional

150°C

Tipe Pemasangan

Through Hole

Paket / Kasus

TO-220-3

Paket Perangkat Pemasok

TO-220

Disipasi Daya (Maks)

165W (Tc)

Tipe FET

N-Channel

Fitur FET

-

Tiriskan ke Sumber Tegangan (Vdss)

800V

Arus - Pengurasan Kontinu (Id) @ 25°C

11.5A (Ta)

Rds Aktif (Maks) @ Id, Vgs

450 mOhm @ 5.8A, 10V

Vgs(th) (Maks) @ Id

4V @ 570µA

Biaya Gerbang (Qg) (Maks) @ Vgs

23nC @ 10V

Kapasitansi Masukan (Ciss) (Maks) @ Vds

1400pF @ 300V

Tegangan Penggerak (Max Rds Aktif, Min Rds Aktif)

10V

Vgs (Maks)

±20V

Minta Penawaran

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Persediaan 22952 PCS

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