Toshiba Semiconductor and Storage
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TK10A60D(STA4,Q,M)
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TK10A60D(STA4,Q,M)

MOSFET N-CH 600V 10A TO220SIS
Nomor Bagian
TK10A60D(STA4,Q,M)
Pabrikan/Merek
Toshiba Semiconductor and Storage
Seri
π-MOSVII
Status Bagian
Active
Kemasan
Tube
Teknologi
MOSFET (Metal Oxide)
Suhu Operasional
150°C (TJ)
Tipe Pemasangan
Through Hole
Paket / Kasus
TO-220-3 Full Pack
Paket Perangkat Pemasok
TO-220SIS
Disipasi Daya (Maks)
45W (Tc)
Tipe FET
N-Channel
Fitur FET
-
Tiriskan ke Sumber Tegangan (Vdss)
600V
Arus - Pengurasan Kontinu (Id) @ 25°C
10A (Ta)
Rds Aktif (Maks) @ Id, Vgs
750 mOhm @ 5A, 10V
Vgs(th) (Maks) @ Id
4V @ 1mA
Biaya Gerbang (Qg) (Maks) @ Vgs
25nC @ 10V
Kapasitansi Masukan (Ciss) (Maks) @ Vds
1350pF @ 25V
Tegangan Penggerak (Max Rds Aktif, Min Rds Aktif)
10V
Vgs (Maks)
±30V
Minta Penawaran
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Persediaan 30125 PCS
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