Triode/MOS tube/transistor/module
Infineon (Infineon)
Pabrikan
LRC (Leshan Radio)
Pabrikan
NPN, Vceo=65V, Ic=100mA, hfe=200~450
Keterangan
ST (STMicroelectronics)
Pabrikan
TOSHIBA (Toshiba)
Pabrikan
CBI (Creation Foundation)
Pabrikan
NPN,Vceo=40V,Ic=0.2A
Keterangan
TWGMC (Taiwan Dijia)
Pabrikan
Transistor Type: PNP Collector-Emitter Breakdown Voltage (Vceo): 45V Collector Current (Ic): 100mA Power (Pd): 200mW DC Current Gain (hFE@Ic,Vce): 220@2mA,5V
Keterangan
Infineon (Infineon)
Pabrikan
TI (Texas Instruments)
Pabrikan
CSD25304W1015 20V P-Channel NexFET Power MOSFET 6-DSBGA
Keterangan
TECH PUBLIC (Taizhou)
Pabrikan
YFW (You Feng Wei)
Pabrikan
SPTECH (Shenzhen Quality Super)
Pabrikan
Infineon (Infineon)
Pabrikan
NCE (Wuxi New Clean Energy)
Pabrikan
P+N double MOS tube, 40V/8A plus -40V/-7A,
Keterangan
DIODES (US and Taiwan)
Pabrikan
Infineon (Infineon)
Pabrikan
NPN, Vceo=65V, Ic=100mA
Keterangan