Triode/MOS tube/transistor/module
Nomor Bagian
UMW (Friends Taiwan Semiconductor)
Pabrikan
Keterangan
66929 PCS
Persediaan
Nomor Bagian
onsemi (Ansemi)
Pabrikan
This N-channel MOSFET uses Fairchild's advanced Power Trench
Keterangan
93349 PCS
Persediaan
Nomor Bagian
onsemi (Ansemi)
Pabrikan
N-channel, 600V, 7.5A, 1.2Ω@10V
Keterangan
72669 PCS
Persediaan
Nomor Bagian
XDM (Xin Da Mao)
Pabrikan
VDMOS single tube
Keterangan
55518 PCS
Persediaan
Nomor Bagian
onsemi (Ansemi)
Pabrikan
This P-channel enhancement mode field effect transistor is produced using a high cell density DMOS proprietary technology. This very high-density process is ideal for minimizing on-resistance. This device is designed for battery powered applications such as notebook computers and cell phones. The device has excellent on-resistance performance even at gate drive voltages as low as 2.5V.
Keterangan
96777 PCS
Persediaan
Nomor Bagian
FH (Feng Hua)
Pabrikan
PNP, Vceo=-30V, Ic=-0.8A
Keterangan
77046 PCS
Persediaan
Nomor Bagian
UTC(Youshun)
Pabrikan
N-channel, 100V, 15.6A, 100mΩ@10V
Keterangan
86335 PCS
Persediaan
