Vishay Semiconductor Diodes Division
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BZD27B9V1P-HE3-18
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BZD27B9V1P-HE3-18

Product Category: Diode

Basic Information Overview: - Category: Semiconductor - Use: Voltage regulation and rectification - Characteristics: High voltage tolerance, low leakage current - Package: SOD-123FL - Essence: Zener diode - Packaging/Quantity: Tape & Reel, 3000 units per reel

Specifications: - Voltage: 9.1V - Power Dissipation: 1W - Tolerance: ±5% - Operating Temperature Range: -65°C to +150°C

Detailed Pin Configuration: - Pin 1: Anode - Pin 2: Cathode

Functional Features: - Precise voltage regulation - Low reverse leakage current - Fast response time

Advantages and Disadvantages: - Advantages: - Accurate voltage regulation - Wide operating temperature range - Low leakage current - Disadvantages: - Limited power dissipation capability - Sensitive to temperature variations

Working Principles: The BZD27B9V1P-HE3-18 operates based on the principle of the Zener effect, where it maintains a constant voltage across its terminals when reverse-biased.

Detailed Application Field Plans: - Voltage regulation in power supplies - Overvoltage protection in electronic circuits - Signal clamping and limiting

Detailed and Complete Alternative Models: - 1N4739A - BZX55C9V1

This comprehensive entry provides an in-depth understanding of the BZD27B9V1P-HE3-18 diode, covering its category, basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

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Sebutkan 10 pertanyaan dan jawaban umum terkait penerapan BZD27B9V1P-HE3-18 dalam solusi teknis

  1. What is BZD27B9V1P-HE3-18?

    • BZD27B9V1P-HE3-18 is a high-efficiency, low-voltage, dual N-channel MOSFET with a maximum drain-source voltage of 20V and continuous drain current of 6.5A.

  2. What are the typical applications of BZD27B9V1P-HE3-18?

    • BZD27B9V1P-HE3-18 is commonly used in power management, load switching, battery protection, and other low-voltage applications.

  3. What is the maximum power dissipation of BZD27B9V1P-HE3-18?

    • The maximum power dissipation of BZD27B9V1P-HE3-18 is 1.25W.

  4. What is the on-state resistance (RDS(on)) of BZD27B9V1P-HE3-18?

    • The typical on-state resistance of BZD27B9V1P-HE3-18 is 0.009 ohms at VGS = 4.5V.

  5. What is the gate threshold voltage of BZD27B9V1P-HE3-18?

    • The gate threshold voltage of BZD27B9V1P-HE3-18 typically ranges from 0.7V to 1.3V.

  6. Is BZD27B9V1P-HE3-18 suitable for use in battery-powered devices?

    • Yes, BZD27B9V1P-HE3-18 is well-suited for battery-powered devices due to its low-voltage operation and high efficiency.

  7. Can BZD27B9V1P-HE3-18 be used in automotive applications?

    • Yes, BZD27B9V1P-HE3-18 is suitable for automotive applications such as power distribution, motor control, and lighting.

  8. What are the thermal characteristics of BZD27B9V1P-HE3-18?

    • The thermal resistance from junction to ambient (RθJA) of BZD27B9V1P-HE3-18 is 62°C/W.

  9. Does BZD27B9V1P-HE3-18 have built-in ESD protection?

    • Yes, BZD27B9V1P-HE3-18 features built-in ESD protection, making it robust against electrostatic discharge events.

  10. Are there any recommended layout considerations for using BZD27B9V1P-HE3-18 in a PCB design?

    • It is recommended to minimize the length and impedance of the traces connecting the MOSFET to the driver circuitry, and to provide adequate thermal vias for heat dissipation.