RLZTE-1133C

Product Overview

Category: Electronic Component
Use: Signal Amplification
Characteristics: High Gain, Low Noise
Package: TO-92
Essence: NPN Transistor
Packaging/Quantity: 100 pieces per pack

Specifications

• Maximum Collector-Base Voltage: 40V
• Maximum Collector Current: 200mA
• Power Dissipation: 300mW
• Transition Frequency: 250MHz
• Noise Figure: 4dB

Detailed Pin Configuration

1. Emitter (E)
2. Base (B)
3. Collector (C)

Functional Features

• High gain and low noise make it suitable for signal amplification in various electronic circuits.
• Small package size allows for easy integration into compact designs.

Advantages and Disadvantages

Advantages: - High gain - Low noise - Compact package

Disadvantages: - Limited power dissipation - Moderate transition frequency

Working Principles

RLZTE-1133C operates as an NPN transistor, amplifying input signals with high gain and minimal added noise. The collector-base voltage and current ratings determine its suitability for specific circuit applications.

Detailed Application Field Plans

1. Audio Amplification: Utilize RLZTE-1133C in audio amplifier circuits to boost weak signals without introducing significant noise.
2. Sensor Interfaces: Incorporate the transistor in sensor interface circuits to amplify sensor output signals for further processing.
3. Oscillator Circuits: Use the transistor in oscillator circuits to achieve stable and controlled oscillations.

Detailed and Complete Alternative Models

1. BC547
2. 2N2222
3. 2N3904
4. MPS2222A

This comprehensive entry provides a detailed overview of RLZTE-1133C, covering its specifications, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.