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FQD2N80TM_WS
Product Overview
The FQD2N80TM_WS belongs to the category of power MOSFETs and is commonly used in electronic circuits for switching and amplification purposes. This MOSFET is characterized by its high voltage tolerance, low on-state resistance, and efficient thermal performance. It is typically packaged in a TO-252 or DPAK package and is available in quantities suitable for both prototyping and production applications.
Specifications
- Voltage Rating: 800V
- Current Rating: 2A
- On-State Resistance: 4.5Ω
- Package Type: TO-252 (DPAK)
- Quantity: Available in reels of 2500 units
Detailed Pin Configuration
The FQD2N80TM_WS features a standard three-pin configuration with the gate (G), drain (D), and source (S) pins arranged in a linear fashion. The pinout is as follows: - Gate (G): Pin 1 - Drain (D): Pin 2 - Source (S): Pin 3
Functional Features
This MOSFET offers fast switching speeds, low gate drive power requirements, and high input impedance, making it suitable for various power management applications. Its inherent capacitance and low on-state resistance contribute to efficient power conversion and minimal heat dissipation.
Advantages and Disadvantages
Advantages: - High voltage tolerance - Low on-state resistance - Efficient thermal performance
Disadvantages: - Limited current rating compared to higher-power MOSFETs - Sensitive to static discharge
Working Principles
When a sufficient voltage is applied to the gate terminal, the MOSFET enters a conductive state, allowing current to flow between the drain and source terminals. By controlling the gate voltage, the MOSFET can be switched on and off rapidly, enabling precise control over power flow in electronic circuits.
Detailed Application Field Plans
The FQD2N80TM_WS is commonly used in: - Switching power supplies - Motor control circuits - LED lighting applications - Audio amplifiers
Detailed and Complete Alternative Models
- IRF840: Similar voltage and current ratings
- STP16NF06: Lower voltage rating but higher current capability
- FQP27P06: Complementary P-channel MOSFET for specific applications
In conclusion, the FQD2N80TM_WS power MOSFET offers a balance of voltage tolerance, on-state resistance, and thermal performance, making it suitable for a wide range of power management applications. Its fast switching speeds and efficient power handling capabilities make it a popular choice among electronics designers seeking reliable and cost-effective solutions for their projects.
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Sebutkan 10 pertanyaan dan jawaban umum terkait penerapan FQD2N80TM_WS dalam solusi teknis
What is the maximum drain-source voltage rating of FQD2N80TM_WS?
- The maximum drain-source voltage rating of FQD2N80TM_WS is 800V.
What is the continuous drain current rating of FQD2N80TM_WS?
- The continuous drain current rating of FQD2N80TM_WS is 2A.
What is the on-resistance of FQD2N80TM_WS?
- The on-resistance of FQD2N80TM_WS is typically 4.5 ohms.
What is the gate threshold voltage of FQD2N80TM_WS?
- The gate threshold voltage of FQD2N80TM_WS is typically 2.5V.
What are the typical applications for FQD2N80TM_WS?
- FQD2N80TM_WS is commonly used in power management, motor control, and lighting applications.
What is the operating temperature range of FQD2N80TM_WS?
- The operating temperature range of FQD2N80TM_WS is -55°C to 150°C.
Is FQD2N80TM_WS suitable for high-frequency switching applications?
- Yes, FQD2N80TM_WS is suitable for high-frequency switching due to its low on-resistance.
Does FQD2N80TM_WS have built-in protection features?
- FQD2N80TM_WS does not have built-in protection features and may require external circuitry for overcurrent or overvoltage protection.
What is the package type of FQD2N80TM_WS?
- FQD2N80TM_WS is available in a TO-252 package.
Is FQD2N80TM_WS RoHS compliant?
- Yes, FQD2N80TM_WS is RoHS compliant, making it suitable for environmentally friendly designs.