Category: Transistor
Use: Amplification and switching of electronic signals
Characteristics: High current gain, low saturation voltage
Package: SOT-23
Essence: NPN Silicon Transistor
Packaging/Quantity: Reel, 3000 units
Advantages: - High current gain allows for amplification of weak signals - Low saturation voltage reduces power dissipation - Fast switching speed enables rapid signal processing
Disadvantages: - Limited maximum collector current compared to other transistors - Relatively low collector-emitter voltage rating
The BC818-40LT1G operates as a bipolar junction transistor (BJT), where the flow of current is controlled by the application of a small input current at the base terminal. This controls the larger current flowing between the collector and emitter terminals, allowing for amplification or switching of electronic signals.
This completes the entry for BC818-40LT1G, providing comprehensive information on its product details, specifications, features, and applications within the field of electronics.
What is the maximum collector current of BC818-40LT1G?
What is the typical hFE (DC current gain) of BC818-40LT1G?
What is the maximum power dissipation of BC818-40LT1G?
What are the typical applications of BC818-40LT1G?
What is the maximum voltage between base and emitter (VCEO) of BC818-40LT1G?
What is the maximum voltage between collector and emitter (VCE) of BC818-40LT1G?
Is BC818-40LT1G suitable for use in high-frequency applications?
What is the thermal resistance junction to ambient (RθJA) of BC818-40LT1G?
Can BC818-40LT1G be used in battery-powered applications?
Are there any recommended alternative transistors to BC818-40LT1G for similar applications?