MT53D1024M32D4NQ-053 WT ES:D TR

Product Overview

Category

The MT53D1024M32D4NQ-053 WT ES:D TR belongs to the category of semiconductor memory devices.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and tablets.

Characteristics

• High storage capacity: The MT53D1024M32D4NQ-053 WT ES:D TR offers a large storage capacity, allowing for the storage of a significant amount of data.
• Fast data access: With its high-speed read and write capabilities, this product ensures quick data access and retrieval.
• Low power consumption: The MT53D1024M32D4NQ-053 WT ES:D TR is designed to operate efficiently with minimal power consumption.
• Compact package: This product comes in a compact package, making it suitable for integration into various electronic devices.
• Reliable performance: The MT53D1024M32D4NQ-053 WT ES:D TR is known for its reliable performance and durability.

Package and Quantity

The MT53D1024M32D4NQ-053 WT ES:D TR is packaged in a small form factor, typically in a surface-mount package. It is available in various quantities to meet different production requirements.

Specifications

• Memory type: Dynamic Random Access Memory (DRAM)
• Capacity: 1 gigabit (1 Gb)
• Organization: 1024 Meg x 32 bits
• Operating voltage: 1.2V
• Clock frequency: Up to 1600 MHz
• Interface: Double Data Rate 4 (DDR4)
• Operating temperature range: -40°C to +85°C
• Refresh mode: Self-refresh and auto-refresh modes supported
• Package dimensions: 11mm x 13mm

Detailed Pin Configuration

The MT53D1024M32D4NQ-053 WT ES:D TR has a total of 240 pins. The pin configuration is as follows:

• Pin 1: VSS (Ground)
• Pin 2: DQ0 (Data Input/Output Bit 0)
• Pin 3: DQ1 (Data Input/Output Bit 1)
• ...
• Pin 239: VDD (Power Supply)
• Pin 240: NC (No Connection)

Functional Features

• High-speed data transfer: The MT53D1024M32D4NQ-053 WT ES:D TR supports fast data transfer rates, enabling efficient data processing.
• Error correction: This product incorporates error correction mechanisms to ensure data integrity and reliability.
• Power-saving modes: The MT53D1024M32D4NQ-053 WT ES:D TR includes power-saving features that reduce energy consumption during idle periods.
• Burst mode operation: It supports burst mode operation for optimized data transfer efficiency.

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast data access
• Low power consumption
• Compact package size
• Reliable performance

Disadvantages

• Relatively high cost compared to other memory technologies
• Limited endurance due to the nature of DRAM technology

Working Principles

The MT53D1024M32D4NQ-053 WT ES:D TR operates based on the principles of dynamic random access memory (DRAM). It stores data in capacitors within an integrated circuit, which must be periodically refreshed to maintain the stored information. When data needs to be accessed, it is read from or written to the appropriate memory cells using address and control signals.

Detailed Application Field Plans

The MT53D1024M32D4NQ-053 WT ES:D TR is widely used in various electronic devices and systems, including:

1. Personal computers and laptops
2. Servers and data centers
3. Mobile devices such as smartphones and tablets
4. Networking equipment
5. Automotive electronics
6. Industrial control systems

Alternative Models

• MT53D512M32D2NQ-053 WT ES:D TR
• MT53D256M32D1NQ-053 WT ES:D TR
• MT53D128M32D0NQ-053 WT ES:D TR

These alternative models offer different storage capacities and specifications to cater to diverse application requirements.

In conclusion, the MT53D1024M32D4NQ-053 WT ES:D TR is a high-capacity DRAM memory device with fast data access, low power consumption, and reliable performance. It finds applications in various electronic devices and systems across multiple industries.