MT53B512M64D4NW-062 WT ES:D TR

Basic Information Overview

• Category: Memory Module
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • High capacity
  • Fast data transfer rate
  • Low power consumption
• Package: Integrated circuit module
• Essence: Non-volatile memory storage
• Packaging/Quantity: Single unit

Specifications

• Model: MT53B512M64D4NW-062 WT ES:D TR
• Capacity: 512 megabytes (MB)
• Type: DDR4 SDRAM
• Speed: 2666 megahertz (MHz)
• Voltage: 1.2 volts (V)
• Form Factor: 288-pin DIMM
• Operating Temperature: -40°C to +85°C

Detailed Pin Configuration

The MT53B512M64D4NW-062 WT ES:D TR memory module has a 288-pin configuration. The pins are arranged in a specific order to ensure proper connectivity with the host device. The pin configuration includes various signal lines, power supply pins, and ground pins.

Functional Features

• High-speed data transfer: The DDR4 SDRAM technology allows for fast and efficient data transfer between the memory module and the host device.
• Low power consumption: The memory module is designed to operate at low voltage, resulting in reduced power consumption.
• Error correction: The module incorporates error correction techniques to ensure data integrity and reliability.
• Compatibility: The module is compatible with a wide range of electronic devices that support DDR4 memory.

Advantages and Disadvantages

Advantages: - High capacity for storing large amounts of data - Fast data transfer rate for improved performance - Low power consumption for energy efficiency - Error correction ensures data reliability

Disadvantages: - Relatively higher cost compared to lower-capacity memory modules - Limited compatibility with older devices that do not support DDR4 technology

Working Principles

The MT53B512M64D4NW-062 WT ES:D TR memory module operates based on the DDR4 SDRAM technology. It stores data in an array of capacitors, which can hold a charge representing binary information. The module communicates with the host device through a series of electrical signals, enabling data transfer and retrieval.

Detailed Application Field Plans

The MT53B512M64D4NW-062 WT ES:D TR memory module is widely used in various electronic devices, including: 1. Personal computers 2. Laptops and notebooks 3. Servers and data centers 4. Gaming consoles 5. Networking equipment 6. Embedded systems

Detailed and Complete Alternative Models

1. MT53B256M32D2NP-062 WT ES:D TR: 256MB capacity, DDR4 SDRAM, 2666MHz speed
2. MT53B1024M128D4NP-062 WT ES:D TR: 1GB capacity, DDR4 SDRAM, 2666MHz speed
3. MT53B2048M256D8NP-062 WT ES:D TR: 2GB capacity, DDR4 SDRAM, 2666MHz speed
4. MT53B4096M512D16NP-062 WT ES:D TR: 4GB capacity, DDR4 SDRAM, 2666MHz speed

These alternative models offer different capacities while maintaining similar specifications to the MT53B512M64D4NW-062 WT ES:D TR memory module.

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