Micron Technology Inc.
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MT29F8G08ABACAH4:C TR

MT29F8G08ABACAH4:C TR

Product Overview

  • Category: NAND Flash Memory
  • Use: Data storage in electronic devices
  • Characteristics: High capacity, fast read/write speeds, non-volatile memory
  • Package: BGA (Ball Grid Array)
  • Essence: Reliable and efficient data storage solution
  • Packaging/Quantity: Available in reels with a quantity of 250 units per reel

Specifications

  • Memory Capacity: 8 Gigabytes (GB)
  • Interface: Toggle Mode 2.0
  • Voltage: 3.3 Volts (V)
  • Operating Temperature Range: -40°C to +85°C
  • Data Transfer Rate: Up to 400 Megabytes per second (MB/s)
  • Cell Technology: Multi-Level Cell (MLC)
  • ECC Algorithm: BCH (Bose-Chaudhuri-Hocquenghem)

Detailed Pin Configuration

The MT29F8G08ABACAH4:C TR NAND Flash Memory has the following pin configuration:

  1. VCC
  2. GND
  3. ALE (Address Latch Enable)
  4. CLE (Command Latch Enable)
  5. CE (Chip Enable)
  6. RE (Read Enable)
  7. WE (Write Enable)
  8. R/B (Ready/Busy)
  9. DQ0-DQ7 (Data Input/Output)
  10. WP (Write Protect)
  11. RP (Reset Pin)
  12. NC (No Connection)

Functional Features

  • High-speed data transfer for quick read/write operations
  • Large storage capacity for ample data storage needs
  • Low power consumption for energy efficiency
  • Reliable and durable design for long-term data retention
  • Built-in error correction algorithms for data integrity
  • Toggle Mode interface for improved performance

Advantages and Disadvantages

Advantages: - High capacity allows for storing large amounts of data - Fast read/write speeds enable quick access to stored information - Low power consumption helps prolong battery life in portable devices - Error correction algorithms ensure data integrity - Toggle Mode interface enhances performance

Disadvantages: - Limited endurance compared to other types of memory - Higher cost per gigabyte compared to traditional hard drives - Sensitive to environmental factors such as temperature and humidity

Working Principles

The MT29F8G08ABACAH4:C TR NAND Flash Memory utilizes a multi-level cell (MLC) technology. It stores data by trapping electric charges within the floating gate of each memory cell. These charges represent binary values, allowing for the storage of digital information. The memory cells are organized into pages and blocks, which can be read from or written to using specific commands.

Detailed Application Field Plans

The MT29F8G08ABACAH4:C TR NAND Flash Memory is widely used in various electronic devices, including:

  1. Solid-State Drives (SSDs)
  2. USB flash drives
  3. Digital cameras
  4. Smartphones and tablets
  5. Portable media players
  6. Industrial control systems
  7. Automotive infotainment systems

Detailed and Complete Alternative Models

  1. MT29F8G08ABADAWP-IT: Similar specifications with different package type (TSOP)
  2. MT29F8G08ABAEAWP-IT: Similar specifications with different ECC algorithm (RS)
  3. MT29F8G08ABACAWP-IT: Similar specifications with higher operating temperature range (-40°C to +105°C)

These alternative models offer similar functionality and compatibility, providing options based on specific application requirements.

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Sebutkan 10 pertanyaan dan jawaban umum terkait penerapan MT29F8G08ABACAH4:C TR dalam solusi teknis

Sure! Here are 10 common questions and answers related to the application of MT29F8G08ABACAH4:C TR in technical solutions:

  1. Question: What is MT29F8G08ABACAH4:C TR?
    Answer: MT29F8G08ABACAH4:C TR is a specific model of NAND flash memory chip manufactured by Micron Technology.

  2. Question: What is the storage capacity of MT29F8G08ABACAH4:C TR?
    Answer: MT29F8G08ABACAH4:C TR has a storage capacity of 8 gigabytes (GB).

  3. Question: What is the interface used for connecting MT29F8G08ABACAH4:C TR to a system?
    Answer: MT29F8G08ABACAH4:C TR uses a standard NAND flash interface, such as the Open NAND Flash Interface (ONFI) or Toggle Mode.

  4. Question: What are some typical applications of MT29F8G08ABACAH4:C TR?
    Answer: MT29F8G08ABACAH4:C TR is commonly used in various electronic devices, including smartphones, tablets, solid-state drives (SSDs), and embedded systems.

  5. Question: What is the operating voltage range of MT29F8G08ABACAH4:C TR?
    Answer: MT29F8G08ABACAH4:C TR operates at a voltage range of 2.7V to 3.6V.

  6. Question: Does MT29F8G08ABACAH4:C TR support hardware encryption?
    Answer: No, MT29F8G08ABACAH4:C TR does not have built-in hardware encryption capabilities.

  7. Question: What is the maximum data transfer rate of MT29F8G08ABACAH4:C TR?
    Answer: The maximum data transfer rate of MT29F8G08ABACAH4:C TR depends on the specific interface and system configuration, but it can typically achieve speeds of up to several hundred megabytes per second.

  8. Question: Can MT29F8G08ABACAH4:C TR withstand extreme temperatures?
    Answer: Yes, MT29F8G08ABACAH4:C TR is designed to operate reliably in a wide temperature range, including both high and low temperatures.

  9. Question: Is MT29F8G08ABACAH4:C TR compatible with different operating systems?
    Answer: Yes, MT29F8G08ABACAH4:C TR is compatible with various operating systems, including Windows, Linux, and embedded operating systems.

  10. Question: Are there any specific programming considerations for using MT29F8G08ABACAH4:C TR?
    Answer: Yes, when programming with MT29F8G08ABACAH4:C TR, it is important to follow the manufacturer's guidelines and specifications to ensure proper operation and longevity of the flash memory chip.