MT29F64G08CBEDBJ4-12IT:D TR

Product Overview

Category

MT29F64G08CBEDBJ4-12IT:D TR belongs to the category of NAND Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: MT29F64G08CBEDBJ4-12IT:D TR offers a storage capacity of 64 gigabytes (GB).
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick read and write operations.
• Reliable performance: The NAND flash memory technology ensures durability and long-term reliability.
• Low power consumption: It consumes minimal power, making it suitable for battery-powered devices.
• Compact package: The MT29F64G08CBEDBJ4-12IT:D TR comes in a small form factor, enabling easy integration into various devices.

Package and Quantity

The MT29F64G08CBEDBJ4-12IT:D TR is typically packaged in a surface-mount package (SMD) and is available in bulk quantities.

Specifications

• Part Number: MT29F64G08CBEDBJ4-12IT:D TR
• Memory Type: NAND Flash
• Storage Capacity: 64 GB
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: TSOP
• Pin Count: 48

Detailed Pin Configuration

The MT29F64G08CBEDBJ4-12IT:D TR has a total of 48 pins arranged as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. CE#
26. CLE#
27. ALE#
28. RE#
29. WE#
30. WP#
31. R/B#
32. DQ0
33. DQ1
34. DQ2
35. DQ3
36. DQ4
37. DQ5
38. DQ6
39. DQ7
40. VSS
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. NC

Functional Features

• High-speed data transfer: The MT29F64G08CBEDBJ4-12IT:D TR offers fast read and write operations, enabling efficient data access.
• Error correction: It incorporates advanced error correction techniques to ensure data integrity and reliability.
• Wear-leveling algorithm: The NAND flash memory utilizes wear-leveling algorithms to distribute data evenly across memory cells, prolonging the lifespan of the device.
• Block management: The device efficiently manages memory blocks, allowing for efficient data storage and retrieval.

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast data transfer rate
• Low power consumption
• Compact form factor
• Reliable performance

Disadvantages

• Limited endurance: NAND flash memory has a limited number of program/erase cycles before it may become unreliable.
• Higher cost per gigabyte compared to other storage technologies.

Working Principles

The MT29F64G08CBEDBJ4-12IT:D TR utilizes NAND flash memory technology, which stores data in a series of memory cells. These cells are organized into pages and blocks, with each block containing multiple pages. Data can be written to and read from these cells using electrical signals.

During write operations, the memory cells are programmed by applying appropriate voltage levels to the control pins. Reading data involves sensing the electrical charge stored in the memory cells.

Detailed Application Field Plans

The MT29F64G08CBEDBJ4-12IT:D TR is widely used in various electronic devices that require high-capacity data storage. Some common application fields include:

1. Smartphones and tablets: Used for storing operating systems, applications, and user data.
2. Digital cameras: Provides storage for photos and videos.
3. Solid-state drives (SSDs): Used as primary storage in computers and laptops.
4. Automotive electronics: Enables data storage for infotainment systems, navigation, and firmware updates.
5. Industrial automation: Used for data logging, firmware storage