MT29F64G08AECDBJ4-6:D

Product Overview

Category

MT29F64G08AECDBJ4-6:D belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: MT29F64G08AECDBJ4-6:D offers a storage capacity of 64 gigabytes (GB).
• Fast data transfer rate: It provides high-speed data transfer, enabling quick access to stored information.
• Reliable performance: This NAND flash memory ensures reliable and consistent performance over extended periods.
• Low power consumption: The product is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: MT29F64G08AECDBJ4-6:D comes in a compact package, allowing for easy integration into various electronic devices.

Packaging/Quantity

The MT29F64G08AECDBJ4-6:D NAND flash memory is typically packaged in surface mount technology (SMT) packages. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Storage Capacity: 64 gigabytes (GB)
• Interface: NAND
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Package Type: SMT

Detailed Pin Configuration

The pin configuration of MT29F64G08AECDBJ4-6:D is as follows:

1. VCC: Power supply voltage
2. GND: Ground
3. A0-A18: Address inputs
4. CLE: Command latch enable
5. ALE: Address latch enable
6. CE#: Chip enable
7. RE#: Read enable
8. WE#: Write enable
9. R/B#: Ready/Busy status
10. DQ0-DQ15: Data input/output

Functional Features

• Page Program: MT29F64G08AECDBJ4-6:D supports page programming, allowing data to be written in small increments.
• Block Erase: It enables the erasure of entire blocks of data, providing flexibility in managing stored information.
• Random Access: The NAND flash memory allows for random access to data, facilitating quick retrieval and modification.
• Wear Leveling: This feature ensures even distribution of write and erase operations across memory cells, enhancing longevity and reliability.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rate
• Low power consumption
• Compact package size
• Reliable performance

Disadvantages

• Limited endurance: NAND flash memory has a finite number of program/erase cycles, which may affect its lifespan.
• Relatively higher cost compared to other types of memory.

Working Principles

MT29F64G08AECDBJ4-6:D utilizes NAND flash technology, which stores data in memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the charge level within the cell. When data is written, an electric charge is applied to the appropriate memory cells, altering their charge levels. To read the data, the charge levels are measured, allowing the retrieval of stored information.

Detailed Application Field Plans

MT29F64G08AECDBJ4-6:D finds applications in various electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to MT29F64G08AECDBJ4-6:D include: - Samsung K9K8G08U0D - Micron MT29F64G08CBABA - Toshiba TH58NVG7D2FLA89

These alternative models provide comparable storage capacity, performance, and features, making them suitable replacements for MT29F64G08AECDBJ4-6:D in various applications.

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