MT29F512G08CLCCBG1-6R:C

Product Overview

Category

MT29F512G08CLCCBG1-6R:C belongs to the category of NAND flash memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F512G08CLCCBG1-6R:C offers a storage capacity of 512 gigabytes (GB), allowing for ample space to store large amounts of data.
• Fast data transfer rate: With its advanced architecture, this NAND flash memory provides high-speed data transfer, enabling quick access to stored information.
• Reliable performance: The product is designed to deliver reliable performance with low power consumption, making it suitable for battery-powered devices.
• Durable design: The MT29F512G08CLCCBG1-6R:C is built to withstand harsh environmental conditions, ensuring data integrity and longevity.

Package and Quantity

The MT29F512G08CLCCBG1-6R:C is available in a compact CLCCBG1-6R package. Each package contains one unit of the NAND flash memory.

Specifications

• Storage Capacity: 512 GB
• Interface: NAND
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Transfer Rate: Up to 400 megabytes per second (MB/s)
• Erase/Program Cycles: Up to 10,000 cycles

Pin Configuration

The detailed pin configuration of MT29F512G08CLCCBG1-6R:C is as follows:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VCC | Power Supply | | 2 | GND | Ground | | 3 | CE# | Chip Enable | | 4 | CLE | Command Latch Enable | | 5 | ALE | Address Latch Enable | | 6-13 | A0-A7 | Address Inputs | | 14-21 | IO0-IO7 | Data Inputs/Outputs | | 22 | WE# | Write Enable | | 23 | RE# | Read Enable | | 24 | WP# | Write Protect | | 25 | R/B# | Ready/Busy Status |

Functional Features

• Block Erase: The MT29F512G08CLCCBG1-6R:C supports block erase functionality, allowing for efficient erasure of large data blocks.
• Page Program: This NAND flash memory enables page program operations, enabling data to be written in small increments.
• Error Correction Code (ECC): ECC algorithms are implemented to ensure data integrity and reliability.
• Wear-Leveling: The product incorporates wear-leveling techniques to distribute write and erase operations evenly across the memory cells, extending the lifespan of the device.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rate
• Reliable performance
• Durable design
• Efficient block erase and page program operations
• Error correction capabilities
• Wear-leveling technology

Disadvantages

• Relatively high cost compared to lower-capacity NAND flash memory options
• Limited compatibility with certain legacy devices due to its advanced architecture

Working Principles

The MT29F512G08CLCCBG1-6R:C utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on a floating gate. When reading data, the charge level is measured to determine the stored value. During write and erase operations, the charge on the floating gate is modified using electrical pulses.

Detailed Application Field Plans

The MT29F512G08CLCCBG1-6R:C is widely used in various applications, including: - Smartphones and tablets - Digital cameras and camcorders - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems - Medical devices

Alternative Models

Other NAND flash memory models that can be considered as alternatives to MT29F512G08CLCCBG1-6R:C include: - Samsung K9K8G08U0B - Toshiba TH58NVG7D2FLA89 - Micron MT29F512G08CKCABH6

These alternative models offer similar storage capacities and features, providing flexibility for different design requirements.

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