MT29F4G16ABAFAH4-AATES:F

Product Overview

Category

MT29F4G16ABAFAH4-AATES:F belongs to the category of NAND Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F4G16ABAFAH4-AATES:F offers a storage capacity of 4 gigabits (4 Gb).
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick read and write operations.
• Reliable performance: This NAND flash memory ensures reliable and consistent performance over extended periods.
• Low power consumption: It is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: The MT29F4G16ABAFAH4-AATES:F comes in a small form factor, enabling easy integration into various electronic devices.

Package and Quantity

The MT29F4G16ABAFAH4-AATES:F is typically packaged in a surface-mount technology (SMT) package. The exact package type may vary depending on the manufacturer. It is commonly available in reels or trays containing multiple units.

Specifications

• Storage Capacity: 4 Gb
• Interface: NAND
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 200 MB/s (read), up to 100 MB/s (write)
• Endurance: Up to 10,000 program/erase cycles
• Package Type: SMT
• Pin Count: 48

Detailed Pin Configuration

The MT29F4G16ABAFAH4-AATES:F has a total of 48 pins. The pin configuration is as follows:

1. VCC
2. VCCQ
3. GND
4. CE#
5. RE#
6. WE#
7. CLE
8. ALE
9. WP#
10. R/B#
11. DQ0
12. DQ1
13. DQ2
14. DQ3
15. DQ4
16. DQ5
17. DQ6
18. DQ7
19. NC
20. NC
21. NC
22. NC
23. NC
24. NC
25. NC
26. NC
27. NC
28. NC
29. NC
30. NC
31. NC
32. NC
33. NC
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. NC

Functional Features

• Page Read/Program/Erase: The MT29F4G16ABAFAH4-AATES:F supports page-level read, program, and erase operations, allowing for efficient data manipulation.
• Block Management: It incorporates advanced block management algorithms to optimize performance and extend the lifespan of the memory.
• Error Correction Code (ECC): This NAND flash memory utilizes ECC techniques to ensure data integrity and reliability.
• Wear-Leveling: It employs wear-leveling algorithms to distribute write operations evenly across the memory cells, preventing premature cell failure.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rate
• Reliable performance
• Low power consumption
• Compact form factor

Disadvantages

• Limited endurance compared to other non-volatile memory technologies
• Relatively higher cost per gigabit compared to some alternative memory solutions

Working Principles

The MT29F4G16ABAFAH4-AATES:F is based on NAND flash memory technology. It utilizes a grid of memory cells, each capable of storing multiple bits of data. These cells are organized into pages and blocks, allowing for efficient read, program, and erase operations. The memory controller manages the data flow between the host device and the NAND flash memory, ensuring proper data storage and retrieval.

Detailed Application Field Plans

The MT29F4G16ABAFAH4-AATES:F finds applications in various electronic devices that require non-volatile data storage. Some common application fields include:

1. Smartphones and tablets: Used for storing operating systems, applications, and user data.
2. Digital cameras: Utilized for storing high-resolution photos and videos.
3. Solid-state drives (SSDs): Employed as primary storage in computers and laptops, offering fast boot times and improved system performance.

Detailed and Complete Alternative Models

1. MT29F4G08ABAEAWP:A - 4