Micron Technology Inc.
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MT29F4G08ABBFAH4-AATES:F

MT29F4G08ABBFAH4-AATES:F

Product Overview

Category

MT29F4G08ABBFAH4-AATES:F belongs to the category of NAND Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

  • High storage capacity
  • Non-volatile memory
  • Fast read and write speeds
  • Compact size
  • Low power consumption

Package

The MT29F4G08ABBFAH4-AATES:F NAND Flash Memory comes in a small form factor package, making it suitable for integration into compact electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve large amounts of data quickly and reliably.

Packaging/Quantity

The MT29F4G08ABBFAH4-AATES:F NAND Flash Memory is typically packaged in trays or reels, with each package containing a specific quantity of memory chips.

Specifications

  • Memory Type: NAND Flash
  • Capacity: 4GB
  • Interface: Parallel
  • Voltage Supply: 2.7V - 3.6V
  • Operating Temperature: -40°C to +85°C
  • Package Type: TSOP
  • Pin Count: 48

Detailed Pin Configuration

  1. VCC
  2. ALE
  3. CLE
  4. CE#
  5. RE#
  6. WE#
  7. R/B#
  8. NC
  9. NC
  10. NC
  11. NC
  12. NC
  13. NC
  14. NC
  15. NC
  16. NC
  17. NC
  18. NC
  19. NC
  20. NC
  21. NC
  22. NC
  23. NC
  24. NC
  25. NC
  26. NC
  27. NC
  28. NC
  29. NC
  30. NC
  31. NC
  32. NC
  33. NC
  34. NC
  35. NC
  36. NC
  37. NC
  38. NC
  39. NC
  40. NC
  41. NC
  42. NC
  43. NC
  44. NC
  45. NC
  46. NC
  47. NC
  48. GND

Functional Features

  • High-speed data transfer
  • Error correction capabilities
  • Wear-leveling algorithms for extended lifespan
  • Block management for efficient data storage and retrieval
  • Bad block management for improved reliability

Advantages and Disadvantages

Advantages

  • Large storage capacity
  • Fast read and write speeds
  • Compact size
  • Low power consumption
  • Reliable data storage

Disadvantages

  • Limited endurance (limited number of program/erase cycles)
  • Higher cost compared to other memory technologies

Working Principles

The MT29F4G08ABBFAH4-AATES:F NAND Flash Memory operates based on the principles of floating-gate transistors. It uses a grid of memory cells, where each cell can store multiple bits of data by trapping electrons in the floating gate. The presence or absence of electrons determines the stored data value.

During operation, data is written to the memory cells by applying appropriate voltages to the control pins. Reading data involves sensing the voltage levels from the memory cells. The memory controller manages the operations and ensures data integrity.

Detailed Application Field Plans

The MT29F4G08ABBFAH4-AATES:F NAND Flash Memory finds applications in various electronic devices, including: 1. Smartphones and tablets for storing operating systems, apps, and user data. 2. Digital cameras for storing photos and videos. 3. Solid-state drives (SSDs) for high-speed data storage in computers and servers. 4. Portable media players for storing music, videos, and other multimedia content.

Detailed and Complete Alternative Models

  1. MT29F4G08ABADAWP-IT:D
  2. MT29F4G08ABBDAH4-IT:E
  3. MT29F4G08ABADA-WP:A
  4. MT29F4G08ABBDAH4-IT:F

These alternative models offer similar specifications and functionality to the MT29F4G08ABBFAH4-AATES:F NAND Flash Memory.

Note: The above information is subject to change as per the manufacturer's updates.

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Sebutkan 10 pertanyaan dan jawaban umum terkait penerapan MT29F4G08ABBFAH4-AATES:F dalam solusi teknis

  1. Question: What is the capacity of the MT29F4G08ABBFAH4-AATES:F memory chip?
    Answer: The MT29F4G08ABBFAH4-AATES:F has a capacity of 4 gigabytes (GB).

  2. Question: What is the interface type supported by this memory chip?
    Answer: The MT29F4G08ABBFAH4-AATES:F supports the NAND Flash interface.

  3. Question: What is the operating voltage range for this memory chip?
    Answer: The MT29F4G08ABBFAH4-AATES:F operates at a voltage range of 2.7V to 3.6V.

  4. Question: What is the maximum data transfer rate of this memory chip?
    Answer: The MT29F4G08ABBFAH4-AATES:F has a maximum data transfer rate of 52 megabytes per second (MB/s).

  5. Question: Is this memory chip suitable for automotive applications?
    Answer: Yes, the MT29F4G08ABBFAH4-AATES:F is designed for automotive-grade applications.

  6. Question: Does this memory chip support hardware ECC (Error Correction Code)?
    Answer: Yes, the MT29F4G08ABBFAH4-AATES:F supports hardware ECC for improved data integrity.

  7. Question: Can this memory chip withstand high temperatures?
    Answer: Yes, the MT29F4G08ABBFAH4-AATES:F is rated for operation in extended temperature ranges, making it suitable for harsh environments.

  8. Question: What is the typical erase/program cycle endurance of this memory chip?
    Answer: The MT29F4G08ABBFAH4-AATES:F has a typical endurance of 100,000 program/erase cycles.

  9. Question: Does this memory chip support wear-leveling algorithms?
    Answer: Yes, the MT29F4G08ABBFAH4-AATES:F supports built-in wear-leveling algorithms to distribute data evenly across the memory cells and extend the lifespan of the chip.

  10. Question: Is this memory chip RoHS (Restriction of Hazardous Substances) compliant?
    Answer: Yes, the MT29F4G08ABBFAH4-AATES:F is RoHS compliant, ensuring it meets environmental regulations regarding hazardous substances.