Micron Technology Inc.
Gambar mungkin merupakan representasi.
Lihat spesifikasi untuk detail produk.
MT29F4G08ABAFAH4-AATES:F TR

MT29F4G08ABAFAH4-AATES:F TR

Product Overview

  • Category: Memory Device
  • Use: Data storage and retrieval
  • Characteristics:
    • Non-volatile memory
    • High capacity (4GB)
    • NAND Flash technology
  • Package: TSOP (Thin Small Outline Package)
  • Essence: Reliable and high-performance data storage solution
  • Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

  • Model: MT29F4G08ABAFAH4-AATES:F TR
  • Capacity: 4GB
  • Interface: Parallel
  • Voltage: 3.3V
  • Access Time: 25 ns
  • Operating Temperature: -40°C to +85°C
  • Data Retention: Up to 10 years
  • Endurance: Up to 100,000 program/erase cycles

Pin Configuration

The MT29F4G08ABAFAH4-AATES:F TR has a total of 48 pins. The pin configuration is as follows:

  1. VCC
  2. A0
  3. A1
  4. A2
  5. A3
  6. A4
  7. A5
  8. A6
  9. A7
  10. A8
  11. A9
  12. A10
  13. A11
  14. A12
  15. A13
  16. A14
  17. A15
  18. A16
  19. A17
  20. A18
  21. A19
  22. A20
  23. A21
  24. A22
  25. A23
  26. A24
  27. ALE
  28. CLE
  29. RE#
  30. WE#
  31. WP#
  32. R/B#
  33. CE#
  34. VSS
  35. DQ0
  36. DQ1
  37. DQ2
  38. DQ3
  39. DQ4
  40. DQ5
  41. DQ6
  42. DQ7
  43. VSS
  44. NC
  45. NC
  46. NC
  47. NC
  48. VCC

Functional Features

  • High-speed data transfer
  • Error correction and detection mechanisms
  • Block erase and program operations
  • Wear-leveling algorithms for extended lifespan
  • Power-saving features
  • Support for various interfaces and protocols

Advantages

  • Large storage capacity
  • Fast access times
  • Reliable and durable
  • Low power consumption
  • Wide operating temperature range
  • Versatile interface options

Disadvantages

  • Higher cost compared to some other memory technologies
  • Limited write endurance compared to some alternatives

Working Principles

The MT29F4G08ABAFAH4-AATES:F TR is based on NAND Flash technology. It stores data in a series of memory cells organized into blocks. The device uses a combination of electrical charges and transistors to store and retrieve data. When data is written, the memory cells are programmed by applying specific voltage levels. Reading data involves sensing the voltage levels stored in the memory cells.

Application Field Plans

The MT29F4G08ABAFAH4-AATES:F TR is widely used in various applications, including:

  1. Solid-state drives (SSDs)
  2. Embedded systems
  3. Consumer electronics
  4. Automotive systems
  5. Industrial control systems

Alternative Models

Here are some alternative models that offer similar functionality:

  1. MT29F4G16ABCHA
  2. MT29F4G08ABADA
  3. MT29F4G08ABAEAWP

These models have comparable specifications and can be considered as alternatives to the MT29F4G08ABAFAH4-AATES:F TR.

Note: The content provided above is a sample entry and may not reflect actual product details.

Sebutkan 10 pertanyaan dan jawaban umum terkait penerapan MT29F4G08ABAFAH4-AATES:F TR dalam solusi teknis

Sure! Here are 10 common questions and answers related to the application of MT29F4G08ABAFAH4-AATES:F TR in technical solutions:

  1. Q: What is the capacity of the MT29F4G08ABAFAH4-AATES:F TR flash memory? A: The MT29F4G08ABAFAH4-AATES:F TR flash memory has a capacity of 4 gigabytes (GB).

  2. Q: What is the interface used for connecting the MT29F4G08ABAFAH4-AATES:F TR to a system? A: The MT29F4G08ABAFAH4-AATES:F TR flash memory uses a standard NAND flash interface.

  3. Q: What is the operating voltage range of the MT29F4G08ABAFAH4-AATES:F TR? A: The MT29F4G08ABAFAH4-AATES:F TR operates within a voltage range of 2.7V to 3.6V.

  4. Q: Can the MT29F4G08ABAFAH4-AATES:F TR be used in industrial applications? A: Yes, the MT29F4G08ABAFAH4-AATES:F TR is designed to meet the requirements of industrial applications.

  5. Q: Does the MT29F4G08ABAFAH4-AATES:F TR support wear-leveling algorithms? A: Yes, the MT29F4G08ABAFAH4-AATES:F TR supports wear-leveling algorithms to ensure even distribution of write/erase cycles.

  6. Q: What is the maximum data transfer rate of the MT29F4G08ABAFAH4-AATES:F TR? A: The MT29F4G08ABAFAH4-AATES:F TR has a maximum data transfer rate of up to 52 megabytes per second (MB/s).

  7. Q: Can the MT29F4G08ABAFAH4-AATES:F TR withstand high temperatures? A: Yes, the MT29F4G08ABAFAH4-AATES:F TR is designed to operate reliably in high-temperature environments.

  8. Q: Does the MT29F4G08ABAFAH4-AATES:F TR support error correction codes (ECC)? A: Yes, the MT29F4G08ABAFAH4-AATES:F TR supports built-in ECC functionality for data integrity.

  9. Q: Is the MT29F4G08ABAFAH4-AATES:F TR compatible with various operating systems? A: Yes, the MT29F4G08ABAFAH4-AATES:F TR is compatible with popular operating systems like Linux, Windows, and others.

  10. Q: Can the MT29F4G08ABAFAH4-AATES:F TR be used as a boot device in embedded systems? A: Yes, the MT29F4G08ABAFAH4-AATES:F TR can be used as a boot device in embedded systems, providing fast and reliable boot-up capabilities.

Please note that the specific details and features may vary depending on the manufacturer's specifications and application requirements.