MT29F4G08ABAEAH4-IT:E TR

Product Overview

Category

MT29F4G08ABAEAH4-IT:E TR belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F4G08ABAEAH4-IT:E TR offers a storage capacity of 4 gigabytes (GB), allowing for ample data storage.
• Fast data transfer rate: With its high-speed interface, this NAND flash memory enables quick data transfer between the device and the memory.
• Reliable performance: The product ensures reliable performance with its advanced error correction techniques and wear-leveling algorithms.
• Low power consumption: The MT29F4G08ABAEAH4-IT:E TR is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: It comes in a small form factor package, allowing for easy integration into various electronic devices.

Packaging/Quantity

The MT29F4G08ABAEAH4-IT:E TR is typically packaged in tape and reel format. Each reel contains a specific quantity of chips, usually around 1000 units.

Specifications

• Memory Type: NAND Flash
• Capacity: 4 GB
• Interface: Serial Peripheral Interface (SPI)
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: TSOP (Thin Small Outline Package)

Detailed Pin Configuration

The MT29F4G08ABAEAH4-IT:E TR has a total of 48 pins. Here is the detailed pin configuration:

1. VCC
2. VCCQ
3. GND
4. CE#
5. RE#
6. WE#
7. CLE
8. ALE
9. WP#
10. R/B#
11. DQ0
12. DQ1
13. DQ2
14. DQ3
15. DQ4
16. DQ5
17. DQ6
18. DQ7
19. NC
20. NC
21. NC
22. NC
23. NC
24. NC
25. NC
26. NC
27. NC
28. NC
29. NC
30. NC
31. NC
32. NC
33. NC
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. NC

Functional Features

• Page Read/Program/Erase Operations: The MT29F4G08ABAEAH4-IT:E TR supports efficient read, program, and erase operations at the page level.
• Block Management: It incorporates advanced block management algorithms to ensure optimal utilization of memory blocks and enhance overall performance.
• Error Correction: The product employs error correction techniques like ECC (Error Correcting Code) to detect and correct data errors, ensuring data integrity.
• Wear-Leveling: With wear-leveling algorithms, the NAND flash memory evenly distributes write operations across memory cells, extending the lifespan of the device.

Advantages and Disadvantages

Advantages

• High storage capacity allows for extensive data storage.
• Fast data transfer rate enhances overall device performance.
• Reliable performance with advanced error correction techniques.
• Low power consumption prolongs battery life in portable devices.
• Compact package facilitates easy integration into various electronic devices.

Disadvantages

• Limited endurance: NAND flash memory has a finite number of program/erase cycles, which may limit its lifespan.
• Higher cost per gigabyte compared to other storage technologies like hard disk drives (HDDs).

Working Principles

The MT29F4G08ABAEAH4-IT:E TR utilizes NAND flash memory technology. It stores data in memory cells organized in a grid-like structure. Each cell can store multiple bits of information using different voltage levels. The device uses a combination of electrical signals and control commands to perform read, program, and erase operations on the memory cells.

Detailed Application Field Plans

The MT29F4G08ABAEAH4-IT:E TR is widely used in various applications, including: - Smartphones and tablets for storing operating systems, applications, and user data. - Digital cameras for storing high-resolution photos and videos. - Solid-state drives (SSDs) for fast and reliable data storage in computers and servers. - Industrial equipment and automotive electronics for data logging and firmware storage.

Detailed and Complete Alternative Models

• MT29F4G08