Micron Technology Inc.
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MT29F2G16ABAEAWP-AAT:E TR

MT29F2G16ABAEAWP-AAT:E TR

Product Overview

  • Category: Memory Device
  • Use: Data storage and retrieval
  • Characteristics: High capacity, non-volatile, solid-state memory
  • Package: Integrated Circuit (IC)
  • Essence: Flash memory technology
  • Packaging/Quantity: Tape and reel packaging, quantity varies

Specifications

  • Manufacturer: Micron Technology Inc.
  • Model: MT29F2G16ABAEAWP-AAT:E TR
  • Capacity: 2 gigabits (256 megabytes)
  • Interface: Parallel NAND Flash
  • Voltage Supply: 2.7V - 3.6V
  • Operating Temperature: -40°C to +85°C
  • Speed: Up to 50 MHz (max)

Detailed Pin Configuration

The MT29F2G16ABAEAWP-AAT:E TR has a total of 48 pins. The pin configuration is as follows:

  1. VCCQ
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. WE#
  11. RE#
  12. CLE
  13. ALE
  14. CE#
  15. R/B#
  16. WP#
  17. VSSQ
  18. NC
  19. NC
  20. NC
  21. NC
  22. NC
  23. NC
  24. NC
  25. NC
  26. NC
  27. NC
  28. NC
  29. NC
  30. NC
  31. NC
  32. NC
  33. NC
  34. NC
  35. NC
  36. NC
  37. NC
  38. NC
  39. NC
  40. NC
  41. NC
  42. NC
  43. NC
  44. NC
  45. NC
  46. NC
  47. NC
  48. VCC

Functional Features

  • High-speed data transfer
  • Reliable and durable storage solution
  • Low power consumption
  • Error correction capabilities
  • Wear-leveling algorithms for extended lifespan
  • Block erase and program operations

Advantages and Disadvantages

Advantages: - Large storage capacity - Fast data access and transfer speeds - Non-volatile memory (retains data even without power) - Compact size and lightweight - Suitable for various applications

Disadvantages: - Limited write endurance compared to other memory technologies - Higher cost per unit compared to traditional hard drives

Working Principles

The MT29F2G16ABAEAWP-AAT:E TR utilizes NAND flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information, allowing for high-density storage. The memory cells are programmed and erased using electrical charges, which alter the state of the floating gate within each cell. This enables data to be stored and retrieved electronically.

Detailed Application Field Plans

The MT29F2G16ABAEAWP-AAT:E TR is widely used in various electronic devices and systems, including but not limited to:

  1. Solid-state drives (SSDs)
  2. USB flash drives
  3. Digital cameras
  4. Mobile phones
  5. Tablets
  6. Industrial control systems
  7. Automotive electronics
  8. Embedded systems

Detailed and Complete Alternative Models

  1. MT29F2G08ABAEAWP-AAT:E TR - 1 gigabit (128 megabytes) capacity
  2. MT29F4G16ABAEAWP-AAT:E TR - 4 gigabits (512 megabytes) capacity
  3. MT29F8G16ABAEAWP-AAT:E TR - 8 gigabits (1 gigabyte) capacity
  4. MT29F16G16ABAEAWP-AAT:E TR - 16 gigabits (2 gigabytes) capacity

These alternative models offer different storage capacities to suit various application requirements.

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Sebutkan 10 pertanyaan dan jawaban umum terkait penerapan MT29F2G16ABAEAWP-AAT:E TR dalam solusi teknis

Sure! Here are 10 common questions and answers related to the application of MT29F2G16ABAEAWP-AAT:E TR in technical solutions:

  1. Q: What is the MT29F2G16ABAEAWP-AAT:E TR? A: The MT29F2G16ABAEAWP-AAT:E TR is a NAND flash memory chip manufactured by Micron Technology.

  2. Q: What is the storage capacity of the MT29F2G16ABAEAWP-AAT:E TR? A: The MT29F2G16ABAEAWP-AAT:E TR has a storage capacity of 2 gigabytes (GB).

  3. Q: What is the interface used for connecting the MT29F2G16ABAEAWP-AAT:E TR to a system? A: The MT29F2G16ABAEAWP-AAT:E TR uses a standard NAND flash interface, such as the ONFI (Open NAND Flash Interface) or Toggle Mode interface.

  4. Q: What is the operating voltage range of the MT29F2G16ABAEAWP-AAT:E TR? A: The MT29F2G16ABAEAWP-AAT:E TR operates at a voltage range of 2.7V to 3.6V.

  5. Q: What is the maximum data transfer rate supported by the MT29F2G16ABAEAWP-AAT:E TR? A: The MT29F2G16ABAEAWP-AAT:E TR supports a maximum data transfer rate of up to 200 megabytes per second (MB/s).

  6. Q: Can the MT29F2G16ABAEAWP-AAT:E TR be used in industrial applications? A: Yes, the MT29F2G16ABAEAWP-AAT:E TR is designed for industrial-grade applications and can withstand harsh operating conditions.

  7. Q: Does the MT29F2G16ABAEAWP-AAT:E TR support error correction codes (ECC)? A: Yes, the MT29F2G16ABAEAWP-AAT:E TR supports built-in hardware ECC to ensure data integrity.

  8. Q: Can the MT29F2G16ABAEAWP-AAT:E TR be used as a boot device? A: Yes, the MT29F2G16ABAEAWP-AAT:E TR can be used as a boot device in various embedded systems.

  9. Q: Is the MT29F2G16ABAEAWP-AAT:E TR compatible with different operating systems? A: Yes, the MT29F2G16ABAEAWP-AAT:E TR is compatible with popular operating systems like Linux, Windows, and others.

  10. Q: What is the expected lifespan of the MT29F2G16ABAEAWP-AAT:E TR? A: The MT29F2G16ABAEAWP-AAT:E TR has a typical endurance of 3,000 program/erase cycles, ensuring long-term reliability.

Please note that these answers are general and may vary depending on specific implementation requirements and system configurations.