MT29F1T08CQCCBG2-6C:C

Product Overview

Category

MT29F1T08CQCCBG2-6C:C belongs to the category of NAND Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity
• Non-volatile memory
• Fast read and write speeds
• Compact size
• Low power consumption

Package

MT29F1T08CQCCBG2-6C:C is available in a small form factor package, making it suitable for integration into compact electronic devices.

Essence

The essence of MT29F1T08CQCCBG2-6C:C lies in its ability to store and retrieve large amounts of data reliably and efficiently.

Packaging/Quantity

This product is typically packaged in trays or reels, with each unit containing a single MT29F1T08CQCCBG2-6C:C chip.

Specifications

• Memory Type: NAND Flash
• Capacity: 1 Terabit (128 Gigabytes)
• Interface: Toggle Mode 2.0
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: 63-ball VFBGA

Detailed Pin Configuration

The pin configuration of MT29F1T08CQCCBG2-6C:C is as follows:

1. VCC - Power supply voltage
2. GND - Ground
3. CE# - Chip enable
4. RE# - Read enable
5. WE# - Write enable
6. CLE - Command latch enable
7. ALE - Address latch enable
8. WP# - Write protect
9. R/B# - Ready/Busy
10. DQ0-DQ15 - Data input/output

Functional Features

• High-speed data transfer
• Error correction capability
• Wear-leveling algorithms for extended lifespan
• Block management for efficient data organization
• Bad block management for improved reliability

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast read and write speeds
• Low power consumption
• Compact size
• Reliable data storage

Disadvantages

• Limited endurance (finite number of program/erase cycles)
• Relatively higher cost compared to other memory technologies

Working Principles

MT29F1T08CQCCBG2-6C:C utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on a floating gate. The stored data can be accessed by applying appropriate voltage levels to the control pins.

Detailed Application Field Plans

MT29F1T08CQCCBG2-6C:C finds applications in various electronic devices that require high-capacity data storage, such as: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems

Detailed and Complete Alternative Models

Some alternative models to MT29F1T08CQCCBG2-6C:C include: - Samsung K9GAG08U0E - Toshiba TH58NVG7D2FLA89 - Micron MT29F1G08ABADAWP

These models offer similar functionality and can be used as alternatives depending on specific requirements and availability.

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