Micron Technology Inc.
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MT29F1G08ABAEAH4-AATX:E TR

MT29F1G08ABAEAH4-AATX:E TR

Product Overview

  • Category: Memory chip
  • Use: Data storage in electronic devices
  • Characteristics:
    • High capacity
    • Fast read/write speeds
    • Low power consumption
  • Package: Surface mount technology (SMT)
  • Essence: Non-volatile memory
  • Packaging/Quantity: Tape and reel, 3000 units per reel

Specifications

  • Memory Type: NAND Flash
  • Density: 1 Gb (Gigabit)
  • Organization: 128 M x 8 bits
  • Interface: Parallel
  • Operating Voltage: 2.7V - 3.6V
  • Operating Temperature: -40°C to +85°C
  • Data Retention: 10 years
  • Endurance: 100,000 program/erase cycles

Detailed Pin Configuration

The MT29F1G08ABAEAH4-AATX:E TR chip has the following pin configuration:

  1. ALE (Address Latch Enable)
  2. CLE (Command Latch Enable)
  3. CE (Chip Enable)
  4. RE (Read Enable)
  5. WE (Write Enable)
  6. R/B (Ready/Busy)
  7. VCC (Power Supply)
  8. VSS (Ground)
  9. DQ0-DQ7 (Data Input/Output)

Functional Features

  • Page Read/Program/Erase operations
  • Block Erase operations
  • Random access to any memory location
  • Automatic Program and Erase algorithms
  • Hardware data protection
  • Error Correction Code (ECC) support

Advantages and Disadvantages

Advantages: - High storage capacity - Fast data transfer rates - Low power consumption - Reliable and durable - Compact size

Disadvantages: - Limited endurance compared to other memory technologies - Higher cost per bit compared to some alternatives

Working Principles

The MT29F1G08ABAEAH4-AATX:E TR chip is based on NAND Flash technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the voltage levels applied to it. The chip uses various algorithms and control signals to perform read, program, and erase operations.

Detailed Application Field Plans

The MT29F1G08ABAEAH4-AATX:E TR chip finds applications in various electronic devices, including: - Smartphones - Tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players

Detailed and Complete Alternative Models

Some alternative models to the MT29F1G08ABAEAH4-AATX:E TR chip include: - Samsung K9F1G08U0D - Micron MT29F1G08ABBDAH4 - Toshiba TC58NVG1S3HTA00

These alternative models offer similar specifications and functionality, providing options for different design requirements.

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Sebutkan 10 pertanyaan dan jawaban umum terkait penerapan MT29F1G08ABAEAH4-AATX:E TR dalam solusi teknis

  1. Question: What is the capacity of the MT29F1G08ABAEAH4-AATX:E TR?
    Answer: The MT29F1G08ABAEAH4-AATX:E TR has a capacity of 1 gigabit (1 Gb).

  2. Question: What is the voltage range supported by this memory device?
    Answer: The MT29F1G08ABAEAH4-AATX:E TR supports a voltage range of 2.7V to 3.6V.

  3. Question: What is the interface used for communication with this memory device?
    Answer: The MT29F1G08ABAEAH4-AATX:E TR uses a standard NAND Flash interface.

  4. Question: Can this memory device be used in industrial applications?
    Answer: Yes, the MT29F1G08ABAEAH4-AATX:E TR is designed for industrial temperature ranges and can be used in various industrial applications.

  5. Question: What is the maximum operating frequency of this memory device?
    Answer: The MT29F1G08ABAEAH4-AATX:E TR has a maximum operating frequency of 50 MHz.

  6. Question: Does this memory device support hardware data protection features?
    Answer: Yes, the MT29F1G08ABAEAH4-AATX:E TR supports hardware data protection features like ECC (Error Correction Code) and bad block management.

  7. Question: Can I use this memory device in automotive applications?
    Answer: Yes, the MT29F1G08ABAEAH4-AATX:E TR is suitable for automotive applications as it meets the required specifications for automotive-grade components.

  8. Question: What is the typical page size of this memory device?
    Answer: The MT29F1G08ABAEAH4-AATX:E TR has a typical page size of 2,112 bytes.

  9. Question: Does this memory device support wear-leveling algorithms?
    Answer: Yes, the MT29F1G08ABAEAH4-AATX:E TR supports wear-leveling algorithms to ensure even distribution of write and erase cycles across the memory cells.

  10. Question: Can I use this memory device in battery-powered devices?
    Answer: Yes, the MT29F1G08ABAEAH4-AATX:E TR is designed to be power-efficient and can be used in battery-powered devices.