MT29E256G08CECCBH6-6:C

Product Overview

Category

MT29E256G08CECCBH6-6:C belongs to the category of NAND Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity
• Non-volatile memory
• Fast read and write speeds
• Compact size
• Low power consumption

Package

The MT29E256G08CECCBH6-6:C NAND Flash Memory comes in a small form factor package, making it suitable for integration into compact electronic devices.

Essence

The essence of this product lies in its ability to store large amounts of data reliably and efficiently.

Packaging/Quantity

The MT29E256G08CECCBH6-6:C NAND Flash Memory is typically packaged in trays or reels and is available in various quantities depending on the customer's requirements.

Specifications

• Model: MT29E256G08CECCBH6-6:C
• Storage Capacity: 256GB
• Interface: Universal Flash Storage (UFS)
• Voltage: 2.7V - 3.6V
• Operating Temperature: -40°C to 85°C
• Data Transfer Rate: Up to 600MB/s (Read), Up to 500MB/s (Write)

Detailed Pin Configuration

The pin configuration of the MT29E256G08CECCBH6-6:C NAND Flash Memory is as follows:

1. VCCQ (Power Supply)
2. VCC (Power Supply)
3. GND (Ground)
4. CE# (Chip Enable)
5. RE# (Read Enable)
6. WE# (Write Enable)
7. CLE (Command Latch Enable)
8. ALE (Address Latch Enable)
9. WP# (Write Protect)
10. R/B# (Ready/Busy)

Functional Features

• Error Correction Code (ECC) for data integrity
• Wear-leveling algorithm for even distribution of write cycles
• Bad block management for efficient use of memory space
• High-speed data transfer for quick access to stored information
• Power-saving features to optimize battery life

Advantages and Disadvantages

Advantages

• Large storage capacity allows for storing a vast amount of data
• Fast read and write speeds enable quick data access and transfer
• Compact size facilitates integration into various electronic devices
• Low power consumption helps prolong battery life
• Reliable data storage with error correction capabilities

Disadvantages

• Relatively higher cost compared to other types of memory
• Limited lifespan due to finite write cycles
• Susceptible to physical damage if mishandled or exposed to extreme conditions

Working Principles

The MT29E256G08CECCBH6-6:C NAND Flash Memory utilizes the principles of floating-gate transistors to store data. It consists of numerous memory cells organized in a grid-like structure. Each cell can store multiple bits of information by trapping electrons in the floating gate.

During data storage, electrical charges are applied to the control gate and the appropriate voltage levels are set on the source and drain terminals. This process determines whether the cell is programmed with a "0" or a "1". The trapped charge remains even when power is removed, allowing for non-volatile data storage.

Detailed Application Field Plans

The MT29E256G08CECCBH6-6:C NAND Flash Memory finds extensive application in:

1. Smartphones and tablets for storing operating systems, applications, and user data.
2. Solid-state drives (SSDs) for high-speed data storage in laptops and desktop computers.
3. Digital cameras for storing high-resolution photos and videos.
4. Automotive electronics for data logging, infotainment systems, and firmware storage.
5. Industrial automation for storing critical system configurations and log files.

Detailed and Complete Alternative Models

1. MT29E256G08CECCBH6-6: Similar to the MT29E256G08CECCBH6-6:C model but without the extended temperature range.
2. MT29E256G08CECCBH6-6A: A variant with enhanced endurance and longer lifespan.
3. MT29E256G08CECCBH6-6B: A higher-capacity version with 512GB of storage.

These alternative models offer different specifications and features to cater to diverse customer requirements.

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