AT49BV802A-70CI-T

Product Overview

Category

AT49BV802A-70CI-T belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• Non-volatile: The AT49BV802A-70CI-T retains stored data even when power is removed.
• High capacity: It offers a storage capacity of 8 megabits (1 megabyte).
• Fast access time: With a maximum access time of 70 nanoseconds, it ensures quick retrieval of data.
• Low power consumption: The device operates at low power levels, making it suitable for battery-powered applications.

Package

The AT49BV802A-70CI-T is available in a compact integrated circuit package. It is commonly found in a 32-pin plastic small outline J-lead (SOJ) package.

Essence

The essence of the AT49BV802A-70CI-T lies in its ability to provide reliable and high-capacity non-volatile memory storage for electronic devices.

Packaging/Quantity

This product is typically packaged in reels or tubes, with each containing a specific quantity of AT49BV802A-70CI-T chips. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Flash EEPROM
• Capacity: 8 Megabits (1 Megabyte)
• Access Time: 70 Nanoseconds
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Organization: 512K x 16
• Erase/Program Suspend & Resume Support: Yes
• Data Retention: 20 years

Detailed Pin Configuration

The AT49BV802A-70CI-T has a total of 32 pins, each serving a specific purpose. The pin configuration is as follows:

1. A0 - Address Input
2. A1 - Address Input
3. A2 - Address Input
4. A3 - Address Input
5. A4 - Address Input
6. A5 - Address Input
7. A6 - Address Input
8. A7 - Address Input
9. A8 - Address Input
10. A9 - Address Input
11. A10 - Address Input
12. A11 - Address Input
13. A12 - Address Input
14. A13 - Address Input
15. A14 - Address Input
16. A15 - Address Input
17. BYTE# - Byte Selection Input
18. CE# - Chip Enable Input
19. OE# - Output Enable Input
20. WE# - Write Enable Input
21. I/O0 - Data Input/Output
22. I/O1 - Data Input/Output
23. I/O2 - Data Input/Output
24. I/O3 - Data Input/Output
25. I/O4 - Data Input/Output
26. I/O5 - Data Input/Output
27. I/O6 - Data Input/Output
28. I/O7 - Data Input/Output
29. VCC - Power Supply
30. GND - Ground
31. RP# - Ready/Busy Output
32. RESET# - Reset Input

Functional Features

The AT49BV802A-70CI-T offers several functional features that enhance its usability and performance:

• Erase and Program Suspend & Resume Support: This feature allows for efficient management of erase and program operations, enabling interruption and resumption as needed.
• High-Speed Access: With a maximum access time of 70 nanoseconds, the device ensures fast retrieval of data.
• Low Power Consumption: The AT49BV802A-70CI-T operates at low power levels, making it suitable for battery-powered applications.
• Reliable Data Retention: The product has a data retention period of up to 20 years, ensuring long-term storage reliability.

Advantages and Disadvantages

Advantages

• High capacity storage
• Fast access time
• Non-volatile memory
• Low power consumption
• Reliable data retention

Disadvantages

• Limited compatibility with certain devices due to its parallel interface
• Relatively higher cost compared to other memory options

Working Principles

The AT49BV802A-70CI-T utilizes flash EEPROM technology for data storage. It employs a combination of floating-gate transistors and charge trapping mechanisms to store and retrieve data. When data is written, charges are trapped in the floating gate, altering the transistor's behavior. This alteration allows for the retention of data even when power is removed. During read operations, the stored charges are sensed, allowing the retrieval of the stored information.

Detailed Application Field Plans

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