AT29BV010A-12TU

Product Overview

Category

AT29BV010A-12TU belongs to the category of non-volatile memory devices.

Use

This product is primarily used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: The stored data is retained even when power is removed.
• High density: Offers a large storage capacity.
• Fast access time: Allows for quick retrieval of data.
• Low power consumption: Operates efficiently with minimal power usage.

Package

AT29BV010A-12TU is available in a compact package, suitable for integration into various electronic devices.

Essence

The essence of this product lies in its ability to provide reliable and persistent data storage in electronic systems.

Packaging/Quantity

AT29BV010A-12TU is typically packaged in reels or tubes, with each package containing a specific quantity of devices.

Specifications

• Model: AT29BV010A-12TU
• Memory Type: Non-volatile
• Capacity: 1 Megabit (128 Kilobytes)
• Access Time: 120 nanoseconds
• Operating Voltage: 2.7V - 3.6V
• Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The AT29BV010A-12TU has a total of 32 pins, which are assigned specific functions as follows:

1. A0-A16: Address Inputs
2. CE: Chip Enable
3. OE: Output Enable
4. WE: Write Enable
5. VCC: Power Supply
6. GND: Ground
7. DQ0-DQ7: Data Input/Output

Functional Features

• Random Access: Allows for direct access to any memory location.
• Byte-Writable: Enables individual byte-level write operations.
• Sector Erase: Supports erasing of specific memory sectors.
• Data Protection: Provides hardware and software protection mechanisms to prevent accidental data modification.

Advantages

• Non-volatile nature ensures data retention even during power loss.
• High storage density allows for efficient data storage in compact devices.
• Fast access time enables quick retrieval of stored information.
• Low power consumption prolongs battery life in portable devices.

Disadvantages

• Limited storage capacity compared to other memory technologies.
• Relatively slower write speeds compared to volatile memory types.
• Susceptible to data corruption if not properly protected against electrical disturbances.

Working Principles

AT29BV010A-12TU utilizes Flash memory technology, which stores data by trapping electric charges within floating gate transistors. These trapped charges represent binary values (0 or 1), allowing for non-volatile data storage.

The memory cells are organized into sectors, each containing multiple bytes. Data can be written to individual bytes or erased at the sector level. The chip enable (CE), output enable (OE), and write enable (WE) pins control the read, write, and erase operations.

Detailed Application Field Plans

AT29BV010A-12TU finds applications in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems

It is commonly used for storing firmware, configuration data, and other critical information that needs to be retained even when power is removed.

Detailed and Complete Alternative Models

• AT29BV020-20TC: 2 Megabit Flash Memory
• AT29C040A-90JU: 4 Megabit CMOS Flash Memory
• AT45DB161E-SHN-T: 16 Megabit DataFlash Memory
• AT25SF041-SSHD-T: 4 Megabit Serial Flash Memory

These alternative models offer different capacities, access times, and package options, providing flexibility for various application requirements.

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