AT29BV010A-12TI

Product Overview

Category

AT29BV010A-12TI belongs to the category of non-volatile memory devices.

Use

It is primarily used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: Retains data even when power is turned off.
• High density: Offers a large storage capacity.
• Fast access time: Allows for quick retrieval of data.
• Low power consumption: Operates efficiently with minimal power usage.

Package

AT29BV010A-12TI is available in a compact package, suitable for integration into various electronic devices.

Essence

The essence of AT29BV010A-12TI lies in its ability to provide reliable and persistent data storage in electronic systems.

Packaging/Quantity

This product is typically packaged in reels or trays, with each containing a specific quantity of AT29BV010A-12TI chips.

Specifications

• Model: AT29BV010A-12TI
• Memory Type: Non-volatile
• Capacity: 1 Megabit (128 Kilobytes)
• Access Time: 120 nanoseconds
• Operating Voltage: 2.7V - 3.6V
• Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The AT29BV010A-12TI chip has the following pin configuration:

1. VCC: Power supply voltage
2. A0-A16: Address inputs
3. CE: Chip enable
4. OE: Output enable
5. WE: Write enable
6. I/O0-I/O7: Data input/output lines
7. RESET: Reset signal
8. NC: No connection (reserved)

Functional Features

• Random access: Allows for reading and writing data at any address location.
• Sector erase: Supports erasing data in specific sectors, enabling efficient memory management.
• Page programming: Enables fast and flexible data programming in individual memory pages.
• Data protection: Provides hardware and software methods to protect stored data from accidental modification.

Advantages and Disadvantages

Advantages

• Non-volatile nature ensures data retention even during power loss.
• High storage capacity allows for storing large amounts of data.
• Fast access time enables quick retrieval of information.
• Low power consumption prolongs battery life in portable devices.

Disadvantages

• Limited rewrite cycles: The memory cells have a finite number of erase/write cycles before they degrade.
• Relatively higher cost compared to volatile memory options.
• Requires additional circuitry for interfacing with the microcontroller or processor.

Working Principles

AT29BV010A-12TI utilizes Flash memory technology. It stores data by trapping electric charges within floating gate transistors. These charges represent binary values (0 or 1). The presence or absence of charge determines the stored data. Reading involves sensing the charge level, while writing and erasing involve applying appropriate voltage levels to modify the charge state.

Detailed Application Field Plans

AT29BV010A-12TI finds applications in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Detailed and Complete Alternative Models

Some alternative models to AT29BV010A-12TI include: - AT28C010E-12PI - SST39SF010A-70-4C-PHE - W27C010-70Z

These models offer similar functionality and can be considered as alternatives based on specific requirements.

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