DS1350YL-70IND

Product Overview

Category: Integrated Circuit (IC)

Use: The DS1350YL-70IND is a non-volatile static RAM (NVSRAM) integrated circuit. It combines the benefits of both SRAM and EEPROM, providing high-speed read/write operations along with non-volatile data storage.

Characteristics: - Non-volatile memory - High-speed read/write operations - Low power consumption - Durable and reliable - Wide operating temperature range

Package: The DS1350YL-70IND is available in a 32-pin SOIC (Small Outline Integrated Circuit) package.

Essence: The essence of the DS1350YL-70IND lies in its ability to retain data even when power is removed, making it ideal for applications where data integrity is crucial.

Packaging/Quantity: The DS1350YL-70IND is typically sold in reels containing multiple units. The exact quantity per reel may vary depending on the manufacturer.

Specifications

• Memory Size: 512 kilobits (64 kilobytes)
• Organization: 8K x 8 bits
• Supply Voltage: 4.5V to 5.5V
• Access Time: 70ns
• Standby Current: 100μA (typical)
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The DS1350YL-70IND features a 32-pin SOIC package with the following pin configuration:

1. Chip Enable (CE)
2. Output Enable (OE)
3. Write Enable (WE)
4. Address Inputs (A0-A12)
5. Data Inputs/Outputs (DQ0-DQ7)
6. Ground (GND)
7. Vcc (Power Supply)

Functional Features

• Non-volatile storage: The DS1350YL-70IND retains data even when power is removed, ensuring data integrity.
• High-speed operation: It offers fast read and write access times, making it suitable for applications requiring quick data retrieval and updates.
• Low power consumption: The IC consumes minimal power during standby, reducing overall energy usage.
• Durable and reliable: With its non-volatile memory technology, the DS1350YL-70IND provides long-term data retention and reliable performance.
• Wide operating temperature range: It can operate reliably in extreme temperature conditions, making it suitable for various environments.

Advantages and Disadvantages

Advantages: - Non-volatile storage ensures data integrity - Fast read/write operations - Low power consumption - Durable and reliable - Wide operating temperature range

Disadvantages: - Limited memory size (512 kilobits) - Higher cost compared to standard SRAM

Working Principles

The DS1350YL-70IND utilizes a combination of SRAM and EEPROM technologies. When power is applied, the IC operates as a standard SRAM, allowing high-speed read and write operations. However, it also incorporates an integrated charge pump and control circuitry that transfers the data from the SRAM array to non-volatile EEPROM cells during power-down or power loss events. This ensures that the data remains intact even when power is removed.

Detailed Application Field Plans

The DS1350YL-70IND finds applications in various fields where data integrity is critical, such as: 1. Industrial automation systems 2. Medical equipment 3. Automotive electronics 4. Aerospace and defense systems 5. Power grid monitoring and control

In these applications, the DS1350YL-70IND provides reliable data storage and retrieval, even in harsh operating conditions.

Detailed and Complete Alternative Models

1. DS1230AB-120+: Similar to DS1350YL-70IND, but with a larger memory size of 1 megabit (128 kilobytes).
2. DS1225AD-150+: Non-volatile SRAM with a memory size of 256 kilobits (32 kilobytes).
3. FM1608-120-PG: Ferroelectric RAM (FRAM) with a memory size of 64 kilobits (8 kilobytes).

These alternative models offer different memory sizes and technologies to suit specific application requirements.

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