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DS1230Y-200IND

DS1230Y-200IND

Product Overview

Category: Integrated Circuits (ICs)

Use: The DS1230Y-200IND is a non-volatile static RAM (NVSRAM) integrated circuit. It combines the benefits of both RAM and non-volatile memory, making it suitable for applications that require data retention even when power is lost.

Characteristics: - Non-volatile memory - Static random-access memory (SRAM) - 2K x 8 organization - 200ns access time - Low power consumption - DIP package - RoHS compliant

Package: The DS1230Y-200IND is available in a 24-pin Dual In-Line Package (DIP), which provides easy integration into existing circuit boards.

Essence: The essence of the DS1230Y-200IND lies in its ability to retain data without the need for continuous power supply. This makes it ideal for applications where data integrity is crucial, such as in industrial control systems, medical equipment, and automotive electronics.

Packaging/Quantity: The DS1230Y-200IND is typically sold in reels or tubes, with a quantity of 25 units per reel/tube.

Specifications

  • Memory Size: 2K x 8 bits
  • Access Time: 200ns
  • Supply Voltage: 4.5V to 5.5V
  • Standby Current: 100μA (typical)
  • Operating Temperature Range: -40°C to +85°C
  • Data Retention: >10 years
  • Endurance: 1 million write cycles

Detailed Pin Configuration

The DS1230Y-200IND has a total of 24 pins, each serving a specific function. Here is the detailed pin configuration:

  1. Chip Enable (CE)
  2. Output Enable (OE)
  3. Write Enable (WE)
  4. Address Inputs (A0-A10)
  5. Data Inputs/Outputs (DQ0-DQ7)
  6. Ground (GND)
  7. No Connection (NC)
  8. VCC

Functional Features

  • Non-volatile data storage: The DS1230Y-200IND retains data even when power is lost, ensuring data integrity and reliability.
  • Fast access time: With a 200ns access time, the DS1230Y-200IND provides quick read and write operations.
  • Low power consumption: The integrated circuit consumes minimal power, making it suitable for battery-powered devices.
  • Easy integration: The DIP package allows for easy integration into existing circuit boards.

Advantages and Disadvantages

Advantages: - Non-volatile memory ensures data retention - Fast access time for efficient data transfer - Low power consumption extends battery life - Easy integration with existing circuit boards

Disadvantages: - Limited memory size (2K x 8 bits) - Relatively higher cost compared to standard SRAM

Working Principles

The DS1230Y-200IND utilizes a combination of SRAM and non-volatile memory technologies. When power is applied, the device operates like a standard SRAM, allowing for fast read and write operations. However, when power is lost, an internal lithium energy source takes over, providing the necessary power to retain the data stored in the memory cells.

Detailed Application Field Plans

The DS1230Y-200IND finds applications in various fields where data integrity is critical. Some potential application areas include:

  1. Industrial Control Systems: Used for storing critical configuration data and program code in PLCs (Programmable Logic Controllers) and industrial automation systems.
  2. Medical Equipment: Ensures vital patient data is retained during power interruptions in medical devices such as patient monitors and diagnostic equipment.
  3. Automotive Electronics: Stores critical data in automotive systems, including engine control units (ECUs), airbag modules, and infotainment systems.

Detailed and Complete Alternative Models

  1. DS1230AB-200+: Similar to the DS1230Y-200IND, but with an extended temperature range (-40°C to +125°C).
  2. M48Z02-150PC1: A 2K x 8 non-volatile SRAM with a 150ns access time and DIP package.
  3. FM1608-120-PG: A 2K x 8 non-volatile SRAM with a 120ns access time and surface mount package.

These alternative models offer similar functionality and can be considered as alternatives to the DS1230Y-200IND based on specific application requirements.

In conclusion, the DS1230Y-200IND is a non-volatile static RAM integrated circuit that combines the benefits of RAM and non-volatile memory. With its fast access time, low power consumption, and ability to retain data during power loss, it finds applications in various industries where data integrity is

Sebutkan 10 pertanyaan dan jawaban umum terkait penerapan DS1230Y-200IND dalam solusi teknis

Sure! Here are 10 common questions and answers related to the application of DS1230Y-200IND in technical solutions:

  1. Question: What is DS1230Y-200IND?
    Answer: DS1230Y-200IND is a non-volatile static RAM (NVSRAM) integrated circuit that combines the benefits of both SRAM and EEPROM technologies.

  2. Question: What is the capacity of DS1230Y-200IND?
    Answer: DS1230Y-200IND has a capacity of 32 kilobits (4 kilobytes) of non-volatile memory.

  3. Question: How is DS1230Y-200IND powered?
    Answer: DS1230Y-200IND is powered by a single +5V power supply.

  4. Question: Can DS1230Y-200IND be used as a replacement for traditional SRAM?
    Answer: Yes, DS1230Y-200IND can be used as a drop-in replacement for traditional SRAM, providing non-volatility to preserve data during power loss.

  5. Question: What is the advantage of using DS1230Y-200IND over traditional SRAM?
    Answer: The main advantage of DS1230Y-200IND is its non-volatile nature, which allows it to retain data even when power is lost.

  6. Question: How fast is DS1230Y-200IND compared to traditional SRAM?
    Answer: DS1230Y-200IND has access times comparable to traditional SRAM, making it suitable for applications requiring fast read/write operations.

  7. Question: Can DS1230Y-200IND be used in battery-powered devices?
    Answer: Yes, DS1230Y-200IND can be used in battery-powered devices as it consumes very low power during standby and active modes.

  8. Question: Is DS1230Y-200IND compatible with standard microcontrollers and processors?
    Answer: Yes, DS1230Y-200IND is compatible with a wide range of microcontrollers and processors that support standard SRAM interfaces.

  9. Question: Can DS1230Y-200IND be used in industrial applications?
    Answer: Yes, DS1230Y-200IND is designed to withstand harsh industrial environments and can be used in various industrial applications.

  10. Question: How reliable is DS1230Y-200IND?
    Answer: DS1230Y-200IND has a high level of reliability, with a minimum data retention period of 10 years and a minimum endurance of 100,000 write cycles.

Please note that these answers are general and may vary depending on the specific requirements and use cases of the application.