DS1230AB-200IND

Product Overview

Category

The DS1230AB-200IND belongs to the category of non-volatile static random-access memory (NVSRAM).

Use

This product is commonly used as a storage device in various electronic systems where data retention even during power loss is crucial.

Characteristics

• Non-volatile: The DS1230AB-200IND retains data even when power is disconnected.
• Static RAM: It provides fast read and write access times.
• High density: The DS1230AB-200IND offers a large storage capacity.
• Low power consumption: It operates efficiently, consuming minimal power.
• Durable: This product has a long lifespan and can withstand harsh environmental conditions.

Package

The DS1230AB-200IND is available in a standard 32-pin DIP (Dual Inline Package) format.

Essence

The essence of the DS1230AB-200IND lies in its ability to combine the benefits of both volatile and non-volatile memories. It offers the speed and ease of use of static RAM while ensuring data persistence like non-volatile memory.

Packaging/Quantity

The DS1230AB-200IND is typically packaged individually and is available in various quantities depending on the manufacturer's specifications.

Specifications

• Memory Capacity: 2 Megabits (256K x 8)
• Access Time: 200 nanoseconds
• Supply Voltage: 4.5V to 5.5V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Minimum 10 years

Detailed Pin Configuration

The DS1230AB-200IND features a 32-pin DIP package with the following pin configuration:

1. Chip Enable (CE)
2. Output Enable (OE)
3. Write Enable (WE)
4. Address Inputs (A0-A17)
5. Data Inputs/Outputs (DQ0-DQ7)
6. Ground (GND)
7. No Connection (NC)
8. Supply Voltage (VCC)

Functional Features

• Battery Backup: The DS1230AB-200IND includes an integrated lithium energy source, ensuring data retention during power loss.
• Automatic Store on Power Loss: It automatically transfers data from the volatile RAM to non-volatile memory when power is disconnected.
• High-Speed Access: The DS1230AB-200IND provides fast read and write access times, making it suitable for real-time applications.

Advantages and Disadvantages

Advantages

• Non-volatile data storage
• Fast access times
• High-density storage capacity
• Low power consumption
• Durable and reliable

Disadvantages

• Relatively higher cost compared to traditional RAM
• Limited write endurance compared to other non-volatile memories

Working Principles

The DS1230AB-200IND combines a static RAM array with a non-volatile EEPROM (Electrically Erasable Programmable Read-Only Memory) element. When power is available, the device operates as a standard static RAM. However, in the event of a power loss, the integrated lithium energy source ensures that the data is transferred from the volatile RAM to the non-volatile EEPROM, preserving the information.

Detailed Application Field Plans

The DS1230AB-200IND finds applications in various fields, including:

1. Industrial Control Systems: Used for storing critical system parameters and configuration data.
2. Medical Devices: Utilized for data logging and storing patient information.
3. Automotive Electronics: Employed in vehicle control units for storing calibration data and fault codes.
4. Aerospace Systems: Used for mission-critical data storage in satellites and spacecraft.
5. Communication Equipment: Utilized for storing network settings and firmware updates.

Detailed and Complete Alternative Models

1. DS1230AB-100IND: Similar to DS1230AB-200IND but with a 100 nanosecond access time.
2. DS1230AB-150IND: Similar to DS1230AB-200IND but with a 150 nanosecond access time.
3. DS1230AB-250IND: Similar to DS1230AB-200IND but with a 250 nanosecond access time.

These alternative models offer different access times to suit specific application requirements while maintaining similar functionality and characteristics.

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