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IPB65R045C7ATMA1
Product Overview
Category
The IPB65R045C7ATMA1 belongs to the category of power MOSFETs.
Use
It is commonly used in power supply applications, motor control, and other high-power switching applications.
Characteristics
- High voltage capability
- Low gate charge
- Fast switching speed
- Low on-resistance
Package
The IPB65R045C7ATMA1 is typically available in a TO-263-3 package.
Essence
This MOSFET is essential for efficient power management and control in various electronic systems.
Packaging/Quantity
It is usually supplied in reels with a quantity of 800 units per reel.
Specifications
- Drain-Source Voltage (VDS): 650V
- Continuous Drain Current (ID): 52A
- Power Dissipation (PD): 200W
- Gate-Source Voltage (VGS): ±20V
- On-Resistance (RDS(on)): 65mΩ
Detailed Pin Configuration
The IPB65R045C7ATMA1 has a standard pin configuration with three pins: gate, drain, and source.
Functional Features
- Low gate charge allows for efficient switching.
- High voltage capability enables use in a wide range of applications.
- Fast switching speed reduces power loss during switching transitions.
Advantages
- High voltage capability suitable for diverse applications.
- Low on-resistance minimizes power dissipation.
- Fast switching speed enhances efficiency.
Disadvantages
- May require careful consideration of driving circuitry due to its high voltage rating.
- The TO-263-3 package may not be suitable for all application layouts.
Working Principles
The IPB65R045C7ATMA1 operates based on the principles of field-effect transistors, utilizing the control of the gate voltage to modulate the flow of current between the drain and source terminals.
Detailed Application Field Plans
The IPB65R045C7ATMA1 is well-suited for use in: - Switched-mode power supplies - Motor drives - Inverters - Solar inverters - Uninterruptible power supplies (UPS)
Detailed and Complete Alternative Models
Some alternative models to the IPB65R045C7ATMA1 include: - IRFB7440PbF - FDPF51N25T - STP80NF55-06
In conclusion, the IPB65R045C7ATMA1 power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it an ideal choice for various power management and control applications.
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Sebutkan 10 pertanyaan dan jawaban umum terkait penerapan IPB65R045C7ATMA1 dalam solusi teknis
What is the maximum drain-source voltage of IPB65R045C7ATMA1?
- The maximum drain-source voltage of IPB65R045C7ATMA1 is 650V.
What is the continuous drain current rating of IPB65R045C7ATMA1?
- The continuous drain current rating of IPB65R045C7ATMA1 is 65A.
What is the on-state resistance of IPB65R045C7ATMA1?
- The on-state resistance of IPB65R045C7ATMA1 is typically 45mΩ.
What is the gate-source threshold voltage of IPB65R045C7ATMA1?
- The gate-source threshold voltage of IPB65R045C7ATMA1 is typically 2.5V.
Is IPB65R045C7ATMA1 suitable for high-frequency switching applications?
- Yes, IPB65R045C7ATMA1 is suitable for high-frequency switching applications due to its low on-state resistance and fast switching characteristics.
What are the typical applications of IPB65R045C7ATMA1?
- Typical applications of IPB65R045C7ATMA1 include motor control, power supplies, inverters, and industrial automation.
Does IPB65R045C7ATMA1 have built-in protection features?
- IPB65R045C7ATMA1 does not have built-in protection features and may require external circuitry for overcurrent or overvoltage protection.
What is the operating temperature range of IPB65R045C7ATMA1?
- The operating temperature range of IPB65R045C7ATMA1 is typically -55°C to 175°C.
Can IPB65R045C7ATMA1 be used in automotive applications?
- Yes, IPB65R045C7ATMA1 is suitable for automotive applications such as electric vehicle powertrains and onboard chargers.
What are the key advantages of using IPB65R045C7ATMA1 in technical solutions?
- The key advantages of using IPB65R045C7ATMA1 include high voltage capability, low on-state resistance, and suitability for high-power applications.