S29GL032N90FFIS43

Product Overview

Category

S29GL032N90FFIS43 belongs to the category of flash memory devices.

Use

It is primarily used for data storage in various electronic devices, such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• Non-volatile memory: Retains data even when power is turned off.
• High storage capacity: Offers 32 gigabits (4 gigabytes) of storage space.
• Fast read and write speeds: Enables quick access to stored data.
• Reliable performance: Designed to withstand frequent read/write cycles.
• Low power consumption: Helps conserve battery life in portable devices.

Package

The S29GL032N90FFIS43 flash memory device comes in a small form factor package, suitable for surface mount technology (SMT) assembly on printed circuit boards (PCBs).

Essence

The essence of S29GL032N90FFIS43 lies in its ability to provide high-capacity, non-volatile storage with fast access times and low power consumption.

Packaging/Quantity

This flash memory device is typically packaged in reels or trays, containing a specific quantity of units per package. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: NOR Flash
• Memory Size: 32 gigabits (4 gigabytes)
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: TSOP (Thin Small Outline Package)
• Pin Count: 48 pins

Detailed Pin Configuration

The S29GL032N90FFIS43 flash memory device has a total of 48 pins. Here is a detailed pin configuration:

1. VCC: Power supply voltage
2. A0-A19: Address inputs
3. DQ0-DQ15: Data input/output lines
4. WE#: Write enable control signal
5. CE#: Chip enable control signal
6. OE#: Output enable control signal
7. RP#/BYTE#: Reset/byte# control signal
8. RY/BY#: Ready/busy control signal
9. WP#/ACC: Write protect/acceleration control signal
10. VSS: Ground

Functional Features

• High-speed read and write operations
• Sector erase capability for efficient data management
• Automatic program and erase algorithms for simplified operation
• Hardware and software protection features to prevent unauthorized access
• Error correction code (ECC) support for enhanced data integrity
• Low power consumption in standby and active modes

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast read and write speeds
• Reliable performance
• Low power consumption
• Sector erase capability for efficient data management

Disadvantages

• Limited endurance: Flash memory cells have a finite number of erase/write cycles before they degrade.
• Relatively higher cost compared to other types of memory.

Working Principles

The S29GL032N90FFIS43 flash memory device utilizes NOR flash technology. It stores data by trapping electric charges in floating gate transistors. When reading data, the stored charges are detected as voltage levels, representing binary values. During programming or erasing, high voltages are applied to modify the charge levels in the floating gates.

Detailed Application Field Plans

The S29GL032N90FFIS43 flash memory device finds applications in various electronic devices, including: 1. Smartphones and tablets for storing operating systems, applications, and user data. 2. Digital cameras for storing photos and videos. 3. Portable media players for storing music, videos, and other multimedia content. 4. Industrial control systems for storing firmware and configuration data. 5. Automotive electronics for storing maps, firmware, and diagnostic information.

Detailed and Complete Alternative Models

1. S29GL064N90FFIS43: Similar to S29GL032N90FFIS43 but with double the storage capacity (64 gigabits).
2. S29GL016D90TFI010: A lower capacity flash memory device (16 gigabits) with a different package type (TSOP II).

These alternative models offer different storage capacities or package options, allowing flexibility in design and application requirements.

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