CY7C2270KV18-550BZXC

Product Overview

Category

The CY7C2270KV18-550BZXC belongs to the category of high-performance synchronous SRAM (Static Random Access Memory) chips.

Use

This product is primarily used in applications that require fast and reliable data storage and retrieval. It is commonly employed in various electronic devices such as computers, servers, networking equipment, and telecommunications systems.

Characteristics

• High Performance: The CY7C2270KV18-550BZXC offers fast access times and high bandwidth, making it suitable for demanding applications.
• Large Capacity: With a capacity of 2 megabits (256 kilobytes), this chip provides ample storage space for data-intensive tasks.
• Low Power Consumption: Despite its high performance, the CY7C2270KV18-550BZXC is designed to operate efficiently, minimizing power consumption.
• Wide Temperature Range: This chip can function reliably across a wide temperature range, making it suitable for both commercial and industrial applications.

Package

The CY7C2270KV18-550BZXC is available in a compact and industry-standard BGA (Ball Grid Array) package. This package ensures easy integration into circuit boards and provides robust protection for the chip.

Essence

At its core, the CY7C2270KV18-550BZXC is a high-speed memory chip that enables rapid data access and storage. Its advanced design and features make it an essential component in modern electronic systems.

Packaging/Quantity

The CY7C2270KV18-550BZXC is typically sold in reels or trays, depending on the manufacturer's packaging standards. The exact quantity per package may vary, but it is commonly available in quantities suitable for both small-scale and large-scale production.

Specifications

• Memory Type: Synchronous SRAM
• Capacity: 2 Megabits (256 Kilobytes)
• Access Time: 5.5 Nanoseconds
• Operating Voltage: 3.3 Volts
• Temperature Range: -40°C to +85°C
• Package Type: BGA
• Pin Count: 165

Detailed Pin Configuration

The CY7C2270KV18-550BZXC features a total of 165 pins, each serving a specific purpose in the chip's operation. The detailed pin configuration is as follows:

(Pin Number) - (Pin Name) - (Description) 1 - VDDQ - Power Supply for I/O Buffers 2 - VSSQ - Ground for I/O Buffers 3 - DQ0-DQ15 - Data Input/Output Pins 4 - A0-A17 - Address Inputs 5 - WE# - Write Enable Input 6 - OE# - Output Enable Input 7 - CE# - Chip Enable Input 8 - CLK - Clock Input 9 - CKE - Clock Enable Input 10 - CS# - Chip Select Input 11 - DM0-DM3 - Data Mask Inputs 12 - VDD - Power Supply for Core Logic 13 - VSS - Ground for Core Logic 14 - NC - No Connection ... (Continued for all remaining pins)

Functional Features

The CY7C2270KV18-550BZXC offers several functional features that enhance its performance and usability:

1. High-Speed Operation: With an access time of 5.5 nanoseconds, this chip enables rapid data retrieval and storage.
2. Burst Mode Support: The CY7C2270KV18-550BZXC supports burst mode operations, allowing for efficient sequential data transfers.
3. Low Latency: This chip minimizes latency, ensuring quick response times in data-intensive applications.
4. Easy Integration: The industry-standard BGA package and pin configuration facilitate seamless integration into various electronic systems.
5. Power Management: The CY7C2270KV18-550BZXC incorporates power-saving features, optimizing energy efficiency without compromising performance.

Advantages and Disadvantages

Advantages

• High-performance memory chip suitable for demanding applications.
• Large storage capacity for data-intensive tasks.
• Low power consumption for efficient operation.
• Wide temperature range for versatile usage scenarios.
• Easy integration into circuit boards with the standard BGA package.

Disadvantages

• Relatively higher cost compared to lower-end memory chips.
• Limited availability of alternative models due to specific specifications.

Working Principles

The CY7C2270KV18-550BZXC operates based on the principles of synchronous SRAM. It utilizes a clock signal to synchronize data transfers between the memory array and external devices. When enabled, the chip responds to read or write commands by accessing the specified memory location and transferring data accordingly. The high-speed operation and advanced circuitry ensure reliable and efficient data storage and retrieval.

Detailed Application Field Plans

The CY7C