CY7C1518KV18-250BZC

Product Overview

Category

The CY7C1518KV18-250BZC belongs to the category of high-performance synchronous SRAM (Static Random Access Memory) chips.

Use

This product is primarily used in applications that require fast and reliable data storage and retrieval. It is commonly employed in various electronic devices such as computers, servers, networking equipment, and telecommunications systems.

Characteristics

• High Performance: The CY7C1518KV18-250BZC offers fast access times and high bandwidth, making it suitable for demanding applications.
• Large Capacity: With a capacity of 18 megabits (Mb), this chip provides ample storage space for data-intensive tasks.
• Low Power Consumption: Despite its high performance, the CY7C1518KV18-250BZC is designed to minimize power consumption, ensuring energy efficiency.
• Wide Temperature Range: This chip can operate reliably across a wide temperature range, making it suitable for both commercial and industrial environments.

Package

The CY7C1518KV18-250BZC is available in a compact and industry-standard BGA (Ball Grid Array) package. This package ensures easy integration into circuit boards and facilitates efficient heat dissipation.

Essence

The essence of the CY7C1518KV18-250BZC lies in its ability to provide fast and reliable data storage, enabling smooth operation of various electronic devices.

Packaging/Quantity

This product is typically packaged in reels or trays, with each reel or tray containing a specific quantity of CY7C1518KV18-250BZC chips. The exact packaging and quantity may vary depending on the supplier and customer requirements.

Specifications

• Capacity: 18 Mb
• Organization: 2M x 9
• Supply Voltage: 1.8V
• Access Time: 2.5 ns
• Operating Temperature Range: -40°C to +85°C
• Package Type: BGA

Detailed Pin Configuration

The CY7C1518KV18-250BZC features a specific pin configuration that enables seamless integration into electronic circuits. The detailed pin configuration is as follows:

1. VDDQ
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSSQ
11. VDDQ
12. DQ8
13. DQ9
14. DQ10
15. DQ11
16. DQ12
17. DQ13
18. DQ14
19. DQ15
20. VSSQ
21. VDDQ
22. DQ16
23. DQ17
24. DQ18
25. DQ19
26. DQ20
27. DQ21
28. DQ22
29. DQ23
30. VSSQ
31. VDDQ
32. DQ24
33. DQ25
34. DQ26
35. DQ27
36. DQ28
37. DQ29
38. DQ30
39. DQ31
40. VSSQ
41. VDDQ
42. DQM0
43. DQM1
44. VSSQ
45. VDDQ
46. CLK
47. CKE
48. CS#
49. WE#
50. OE#

Functional Features

The CY7C1518KV18-250BZC offers several functional features that enhance its performance and usability:

• Burst Mode Operation: This chip supports burst mode operation, allowing for efficient consecutive data transfers.
• Write Protection: The CY7C1518KV18-250BZC includes write protection functionality to prevent accidental modification of stored data.
• Power Management: It incorporates power management features that enable low-power standby modes when the chip is not actively accessed.
• Error Correction: This chip implements error correction techniques to ensure data integrity and reliability.

Advantages and Disadvantages

Advantages

• High-performance data storage solution
• Large capacity for data-intensive applications
• Low power consumption
• Wide temperature range for versatile usage
• Efficient burst mode operation
• Reliable data integrity through error correction

Disadvantages

• Limited compatibility with certain legacy systems
• Relatively higher cost compared to lower-capacity alternatives

Working Principles

The CY7C1518KV18-250BZC operates based on the principles of synchronous SRAM. It utilizes a clock signal (CLK) to synchronize data transfers between the memory array and external devices. When a read or write operation is initiated, the chip accesses