CY7C1415KV18-250BZC

Product Overview

Category

The CY7C1415KV18-250BZC belongs to the category of high-performance synchronous SRAM (Static Random Access Memory) chips.

Use

This product is primarily used in applications that require fast and reliable data storage and retrieval. It is commonly employed in various electronic devices such as computers, servers, networking equipment, and telecommunications systems.

Characteristics

• High Performance: The CY7C1415KV18-250BZC offers fast access times and low latency, making it suitable for time-critical operations.
• Large Capacity: With a capacity of 1,048,576 words (each word being 18 bits), this SRAM chip provides ample storage space for data-intensive applications.
• Low Power Consumption: Despite its high performance, the CY7C1415KV18-250BZC is designed to operate efficiently with low power consumption.
• Reliable Operation: This chip incorporates advanced error correction techniques and robust design features to ensure data integrity and system stability.

Package

The CY7C1415KV18-250BZC is available in a compact BGA (Ball Grid Array) package. This package offers excellent thermal dissipation properties and facilitates easy integration into circuit boards.

Essence

At its core, the CY7C1415KV18-250BZC is a high-speed memory chip that enables rapid data access and storage in electronic systems.

Packaging/Quantity

This product is typically sold in reels or trays, with each reel or tray containing a specific quantity of CY7C1415KV18-250BZC chips. The exact packaging and quantity may vary depending on the supplier and customer requirements.

Specifications

• Organization: 1,048,576 words x 18 bits
• Supply Voltage: 2.5V
• Access Time: 2.5 ns (maximum)
• Operating Temperature Range: -40°C to +85°C
• Package Type: BGA
• Pin Count: 165

Detailed Pin Configuration

The CY7C1415KV18-250BZC features a total of 165 pins, each serving a specific function within the chip's operation. The detailed pin configuration is as follows:

(Pin Number) (Pin Name) (Function) 1 VDD Power Supply 2 VDDQ Power Supply for I/O Buffers 3 GND Ground 4 GND Ground 5 NC No Connect 6 NC No Connect 7 A0-A17 Address Inputs ... 165 VSS Ground

Functional Features

• High-Speed Operation: The CY7C1415KV18-250BZC offers fast access times, allowing for quick data retrieval and storage.
• Asynchronous and Synchronous Modes: This chip supports both asynchronous and synchronous operation modes, providing flexibility in system design.
• Burst Mode Support: The SRAM chip includes burst mode functionality, enabling efficient consecutive data transfers.
• Error Correction: Advanced error correction techniques are implemented to ensure data integrity and minimize potential errors.

Advantages and Disadvantages

Advantages

• High performance and low latency
• Large storage capacity
• Low power consumption
• Reliable operation with error correction
• Flexible operation modes

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited availability in certain markets

Working Principles

The CY7C1415KV18-250BZC operates based on the principles of static random access memory. It stores data in a volatile manner, meaning that the stored information is lost when power is removed. The chip utilizes a combination of transistors and capacitors to store and retrieve data quickly and efficiently.

Detailed Application Field Plans

The CY7C1415KV18-250BZC finds applications in various fields, including: - Computer systems and servers - Networking equipment - Telecommunications systems - Industrial automation - Medical devices - Automotive electronics

Detailed and Complete Alternative Models

• CY7C1415KV18-250BZI: Similar to the CY7C1415KV18-250BZC, but with an industrial temperature range (-40°C to +105°C).
• CY7C1415KV18-250BZXI: Enhanced version with extended temperature range and additional features.

These alternative models offer similar functionality and performance characteristics, providing options for different application requirements.

In conclusion, the CY7C1415KV18-250BZC is a high-performance synchronous SRAM chip that offers fast access times, large storage capacity, and low power consumption. It finds applications in various electronic systems and provides reliable data storage and retrieval capabilities.