CY7C1413KV18-250BZI

Product Overview

Category

The CY7C1413KV18-250BZI belongs to the category of high-performance synchronous SRAM (Static Random Access Memory) chips.

Use

This product is primarily used in applications that require fast and reliable data storage and retrieval. It is commonly employed in various electronic devices such as computers, servers, networking equipment, and telecommunications systems.

Characteristics

• High Performance: The CY7C1413KV18-250BZI offers fast access times and low latency, making it suitable for time-critical operations.
• Large Capacity: With a capacity of 1,048,576 bits (128 kilobytes), this chip provides ample storage space for data-intensive applications.
• Synchronous Operation: The SRAM operates synchronously with the system clock, ensuring efficient data transfer and synchronization.
• Low Power Consumption: The CY7C1413KV18-250BZI is designed to minimize power consumption, making it energy-efficient and suitable for battery-powered devices.
• Wide Temperature Range: This chip can operate reliably over a wide temperature range, from -40°C to +85°C, making it suitable for various environments.

Package and Quantity

The CY7C1413KV18-250BZI is available in a compact BGA (Ball Grid Array) package. Each package contains one unit of the SRAM chip.

Specifications

• Organization: 128K x 8 bits
• Voltage Supply: 2.5V
• Access Time: 10 ns
• Operating Temperature Range: -40°C to +85°C
• Package Type: 165-ball BGA

Detailed Pin Configuration

The CY7C1413KV18-250BZI has a total of 165 pins. The pin configuration is as follows:

• Pin 1: VDDQ
• Pin 2: DQ0
• Pin 3: DQ1
• ...
• Pin 164: VSSQ
• Pin 165: NC

Functional Features

• Fast Read and Write Operations: The CY7C1413KV18-250BZI offers high-speed read and write operations, enabling quick data access.
• Burst Mode Support: This chip supports burst mode, allowing for efficient consecutive data transfers.
• Asynchronous Output Enable: The SRAM provides an asynchronous output enable signal, facilitating control over the output data.
• Byte Write Enable: It supports byte-level write operations, providing flexibility in data manipulation.

Advantages and Disadvantages

Advantages

• High performance and low latency
• Large storage capacity
• Energy-efficient design
• Wide temperature range operation
• Compact package size

Disadvantages

• Limited compatibility with certain systems or interfaces
• Relatively higher cost compared to other memory options

Working Principles

The CY7C1413KV18-250BZI operates based on the principles of static random access memory. It utilizes flip-flops to store and retrieve data. The synchronous operation ensures that data is transferred in sync with the system clock, enabling efficient and reliable data access.

Detailed Application Field Plans

The CY7C1413KV18-250BZI finds applications in various fields, including: - Computer systems and servers - Networking equipment - Telecommunications systems - Industrial automation - Medical devices - Automotive electronics

Alternative Models

Several alternative models are available in the market that offer similar functionality to the CY7C1413KV18-250BZI. Some notable alternatives include: - MT45W8MW16BGX-701IT - IS61WV102416BLL-10TLI - AS7C1024B-15TIN

These alternative models can be considered based on specific requirements and compatibility with the target system.

In conclusion, the CY7C1413KV18-250BZI is a high-performance synchronous SRAM chip that offers fast and reliable data storage. With its large capacity, low power consumption, and wide temperature range operation, it is suitable for various applications in the electronics industry.