CY7C1250KV18-400BZC

Product Overview

Category

CY7C1250KV18-400BZC belongs to the category of high-speed synchronous dynamic random access memory (SDRAM) chips.

Use

This product is primarily used in computer systems, servers, and other electronic devices that require high-performance memory for data storage and retrieval.

Characteristics

• High-speed operation: CY7C1250KV18-400BZC operates at a clock frequency of 400 MHz, allowing for fast data transfer rates.
• Large capacity: With a capacity of 1.25 gigabits, this SDRAM chip provides ample storage space for various applications.
• Low power consumption: The chip is designed to minimize power consumption, making it energy-efficient.
• Reliable performance: CY7C1250KV18-400BZC offers reliable and stable performance, ensuring data integrity and system stability.

Package

The CY7C1250KV18-400BZC chip is available in a compact BGA (Ball Grid Array) package, which facilitates easy integration into circuit boards.

Essence

The essence of CY7C1250KV18-400BZC lies in its ability to provide high-speed and reliable memory storage for demanding electronic devices.

Packaging/Quantity

The CY7C1250KV18-400BZC chip is typically packaged in reels or trays, with each reel or tray containing a specific quantity of chips. The exact packaging and quantity may vary depending on the supplier.

Specifications

• Clock Frequency: 400 MHz
• Capacity: 1.25 Gb
• Interface: DDR3
• Voltage: 1.5V
• Operating Temperature Range: -40°C to +85°C
• Package Type: BGA

Detailed Pin Configuration

The CY7C1250KV18-400BZC chip has a specific pin configuration that enables its proper functioning within a circuit. The detailed pin configuration is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. VSS
19. VSS
20. NC
21. A0
22. A1
23. A2
24. A3
25. A4
26. A5
27. A6
28. A7
29. A8
30. A9
31. A10
32. A11
33. A12
34. A13
35. A14
36. A15
37. A16
38. A17
39. A18
40. BA0
41. BA1
42. RAS#
43. CAS#
44. WE#
45. CK
46. CKE
47. CS#
48. DM0
49. DM1
50. VREF

Functional Features

The CY7C1250KV18-400BZC chip offers several functional features that enhance its performance and usability:

1. Burst Mode: The chip supports burst mode operation, allowing for efficient data transfer between the memory and the processor.
2. Auto Precharge: It automatically precharges the memory cells after a read or write operation, optimizing memory access speed.
3. On-Die Termination (ODT): ODT helps to reduce signal reflections and improve signal integrity, resulting in better overall system performance.
4. Self-Refresh: The chip has a self-refresh mode that allows it to retain data even when the power supply is temporarily interrupted.

Advantages and Disadvantages

Advantages

• High-speed operation enables fast data transfer rates.
• Large capacity provides ample storage space for various applications.
• Low power consumption makes it energy-efficient.
• Reliable performance ensures data integrity and system stability.
• Burst mode and auto precharge enhance memory access speed.

Disadvantages

• Limited compatibility with older systems that do not support DDR3 interface.
• Relatively higher cost compared to lower-capacity memory chips.

Working Principles

CY7C1250KV18-400BZC operates based on the principles of synchronous dynamic random access memory (SDRAM). It utilizes a clock signal to synchronize data transfers between the memory and the processor. When a read or write command is issued, the chip accesses the requested data from its memory cells and transfers it to/from the processor.

Detailed Application Field Plans

The CY7C1250KV18-400BZ